SI1304BDL-T1-E3
Hersteller: auf Bestellung 932 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details SI1304BDL-T1-E3
Description: MOSFET N-CH 30V 900MA SC70-3, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 900mA (Tc), Rds On (Max) @ Id, Vgs: 270mOhm @ 900mA, 4.5V, Power Dissipation (Max): 340mW (Ta), 370mW (Tc), Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: SC-70-3, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V.
Weitere Produktangebote SI1304BDL-T1-E3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| SI1304BDL-T1-E3 | Hersteller : Vishay Siliconix |
SC-70 |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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SI1304BDL-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 0.85A 3-Pin SC-70 T/R |
Produkt ist nicht verfügbar |
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SI1304BDL-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 900MA SC70-3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 900mA (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 900mA, 4.5V Power Dissipation (Max): 340mW (Ta), 370mW (Tc) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SC-70-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V |
Produkt ist nicht verfügbar |
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SI1304BDL-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 900MA SC70-3 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 900mA (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 900mA, 4.5V Power Dissipation (Max): 340mW (Ta), 370mW (Tc) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SC-70-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V |
Produkt ist nicht verfügbar |
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SI1304BDL-T1-E3 | Hersteller : Vishay / Siliconix |
MOSFET RECOMMENDED ALT 78-SI1308EDL-T1-GE3 |
Produkt ist nicht verfügbar |