SI1330EDL-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 60V 240MA SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 250mA, 10V
Power Dissipation (Max): 280mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-70-3
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
auf Bestellung 2920 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 22+ | 1.22 EUR |
| 25+ | 1.06 EUR |
| 100+ | 0.79 EUR |
| 500+ | 0.62 EUR |
| 1000+ | 0.48 EUR |
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Technische Details SI1330EDL-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 60V 240MA SC70-3, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 240mA (Ta), Rds On (Max) @ Id, Vgs: 2.5Ohm @ 250mA, 10V, Power Dissipation (Max): 280mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SC-70-3, Drive Voltage (Max Rds On, Min Rds On): 3V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V.
Weitere Produktangebote SI1330EDL-T1-GE3 nach Preis ab 0.37 EUR bis 1.23 EUR
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SI1330EDL-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET 60V Vds 20V Vgs SC70-3 |
auf Bestellung 21968 Stücke: Lieferzeit 14-28 Tag (e) |
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SI1330EDL-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 0.24A 3-Pin SC-70 T/R |
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SI1330EDL-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 0.24A 3-Pin SC-70 T/R |
Produkt ist nicht verfügbar |
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| SI1330EDL-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 250mA; Idm: 1A Case: SC70; SOT323 Mounting: SMD Gate charge: 0.6nC Polarisation: unipolar Technology: TrenchFET® Drain current: 0.25A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape On-state resistance: 8Ω Pulsed drain current: 1A Power dissipation: 0.31W Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI1330EDL-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 240MA SC70-3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240mA (Ta) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 250mA, 10V Power Dissipation (Max): 280mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SC-70-3 Drive Voltage (Max Rds On, Min Rds On): 3V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V |
Produkt ist nicht verfügbar |
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| SI1330EDL-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 250mA; Idm: 1A Case: SC70; SOT323 Mounting: SMD Gate charge: 0.6nC Polarisation: unipolar Technology: TrenchFET® Drain current: 0.25A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape On-state resistance: 8Ω Pulsed drain current: 1A Power dissipation: 0.31W |
Produkt ist nicht verfügbar |