SI1330EDL-T1-GE3 Vishay Semiconductors
auf Bestellung 21968 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.83 EUR |
| 10+ | 0.71 EUR |
| 100+ | 0.53 EUR |
| 500+ | 0.42 EUR |
| 1000+ | 0.32 EUR |
| 3000+ | 0.27 EUR |
| 9000+ | 0.25 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI1330EDL-T1-GE3 Vishay Semiconductors
Description: MOSFET N-CH 60V 240MA SC70-3, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 240mA (Ta), Rds On (Max) @ Id, Vgs: 2.5Ohm @ 250mA, 10V, Power Dissipation (Max): 280mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SC-70-3, Drive Voltage (Max Rds On, Min Rds On): 3V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V.
Weitere Produktangebote SI1330EDL-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
SI1330EDL-T1-GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 60V 0.24A 3-Pin SC-70 T/R |
Produkt ist nicht verfügbar |
|
|
|
SI1330EDL-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 0.24A 3-Pin SC-70 T/R |
Produkt ist nicht verfügbar |
|
| SI1330EDL-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 250mA; Idm: 1A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.25A Pulsed drain current: 1A Power dissipation: 0.31W Case: SC70; SOT323 Gate-source voltage: ±20V On-state resistance: 8Ω Mounting: SMD Gate charge: 0.6nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||
 |
SI1330EDL-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 240MA SC70-3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240mA (Ta) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 250mA, 10V Power Dissipation (Max): 280mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SC-70-3 Drive Voltage (Max Rds On, Min Rds On): 3V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V |
Produkt ist nicht verfügbar |
|
|
|
SI1330EDL-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 240MA SC70-3 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240mA (Ta) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 250mA, 10V Power Dissipation (Max): 280mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SC-70-3 Drive Voltage (Max Rds On, Min Rds On): 3V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V |
Produkt ist nicht verfügbar |
|
| SI1330EDL-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 250mA; Idm: 1A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.25A Pulsed drain current: 1A Power dissipation: 0.31W Case: SC70; SOT323 Gate-source voltage: ±20V On-state resistance: 8Ω Mounting: SMD Gate charge: 0.6nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |