SI1406DH-T1-GE3
SI1406DH-T1-GE3
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 20V 3.1A SC-70-6
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1W
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
FET Type: MOSFET N-Channel, Metal Oxide
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
verfügbar/auf Bestellung
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Technische Details SI1406DH-T1-GE3
Description: MOSFET N-CH 20V 3.1A SC-70-6, Drain to Source Voltage (Vdss): 20V, Supplier Device Package: SC-70-6 (SOT-363), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 1W, Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V, FET Type: MOSFET N-Channel, Metal Oxide, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.9A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta).
Preis SI1406DH-T1-GE3 ab 0 EUR bis 0 EUR
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Hersteller: Vishay Siliconix Description: MOSFET N-CH 20V 3.1A SC-70-6 FET Type: MOSFET N-Channel, Metal Oxide Supplier Device Package: SC-70-6 (SOT-363) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1W Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.9A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Drain to Source Voltage (Vdss): 20V
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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Hersteller: Vishay Siliconix Description: MOSFET N-CH 20V 3.1A SC-70-6 FET Type: MOSFET N-Channel, Metal Oxide Supplier Device Package: SC-70-6 (SOT-363) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1W Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.9A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Drain to Source Voltage (Vdss): 20V
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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