SI1900DL-T1-E3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET 2N-CH 30V 0.59A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 590mA
Rds On (Max) @ Id, Vgs: 480mOhm @ 590mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SC-70-6
auf Bestellung 27000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.46 EUR |
| 6000+ | 0.44 EUR |
| 9000+ | 0.41 EUR |
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Technische Details SI1900DL-T1-E3 Vishay Siliconix
Description: MOSFET 2N-CH 30V 0.59A SC70-6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 270mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 590mA, Rds On (Max) @ Id, Vgs: 480mOhm @ 590mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SC-70-6.
Weitere Produktangebote SI1900DL-T1-E3 nach Preis ab 0.45 EUR bis 1.4 EUR
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SI1900DL-T1-E3 | Hersteller : Vishay Semiconductors |
MOSFET RECOMMENDED ALT SI1900DL |
auf Bestellung 41400 Stücke: Lieferzeit 14-28 Tag (e) |
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SI1900DL-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 30V 0.59A SC70-6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 270mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 590mA Rds On (Max) @ Id, Vgs: 480mOhm @ 590mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SC-70-6 |
auf Bestellung 28730 Stücke: Lieferzeit 21-28 Tag (e) |
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| SI1900DL-T1-E3 | Hersteller : VISHAY |
09+ |
auf Bestellung 1538 Stücke: Lieferzeit 21-28 Tag (e) |
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| SI1900DL-T1-E3 | Hersteller : VISHAY |
SOT363 |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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| SI1900DL-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 630mA; Idm: 1A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.63A Pulsed drain current: 1A Power dissipation: 0.3W Case: SC70-6; SOT363 Gate-source voltage: ±20V On-state resistance: 0.7Ω Mounting: SMD Gate charge: 1.4nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI1900DL-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 630mA; Idm: 1A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.63A Pulsed drain current: 1A Power dissipation: 0.3W Case: SC70-6; SOT363 Gate-source voltage: ±20V On-state resistance: 0.7Ω Mounting: SMD Gate charge: 1.4nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |