SI1900DL-T1-E3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 0.59A SC70-6
Current - Continuous Drain (Id) @ 25°C: 590mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 270mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Rds On (Max) @ Id, Vgs: 480mOhm @ 590mA, 10V
| Anzahl | Preis |
|---|---|
| 3000+ | 0.31 EUR |
| 6000+ | 0.3 EUR |
| 9000+ | 0.28 EUR |
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Technische Details SI1900DL-T1-E3 Vishay Siliconix
Description: MOSFET 2N-CH 30V 0.59A SC70-6, Current - Continuous Drain (Id) @ 25°C: 590mA, Drain to Source Voltage (Vdss): 30V, Power - Max: 270mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR), Supplier Device Package: SC-70-6, Vgs(th) (Max) @ Id: 3V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V, Rds On (Max) @ Id, Vgs: 480mOhm @ 590mA, 10V.
Weitere Produktangebote SI1900DL-T1-E3 nach Preis ab 0.26 EUR bis 0.95 EUR
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SI1900DL-T1-E3 | Vishay Semiconductors |
MOSFETs RECOMMENDED ALT SI19 |
auf Bestellung 26992 Stücke: Lieferzeit 10-14 Tag (e) |
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SI1900DL-T1-E3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 0.59A SC70-6 Supplier Device Package: SC-70-6 Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V Rds On (Max) @ Id, Vgs: 480mOhm @ 590mA, 10V Current - Continuous Drain (Id) @ 25°C: 590mA Drain to Source Voltage (Vdss): 30V Power - Max: 270mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
auf Bestellung 28730 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI1900DL-T1-E3 | VISHAY |
SOT363 |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SI1900DL-T1-E3 |
|
Hersteller: Vishay Semiconductors
MOSFETs RECOMMENDED ALT SI19
MOSFETs RECOMMENDED ALT SI19
auf Bestellung 26992 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.89 EUR |
| 10+ | 0.61 EUR |
| 100+ | 0.44 EUR |
| 500+ | 0.35 EUR |
| 1000+ | 0.34 EUR |
| 3000+ | 0.27 EUR |
| 6000+ | 0.26 EUR |
| SI1900DL-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 0.59A SC70-6
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Rds On (Max) @ Id, Vgs: 480mOhm @ 590mA, 10V
Current - Continuous Drain (Id) @ 25°C: 590mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 270mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 30V 0.59A SC70-6
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Rds On (Max) @ Id, Vgs: 480mOhm @ 590mA, 10V
Current - Continuous Drain (Id) @ 25°C: 590mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 270mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 28730 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 19+ | 0.95 EUR |
| 23+ | 0.8 EUR |
| 100+ | 0.55 EUR |
| 500+ | 0.43 EUR |
| 1000+ | 0.35 EUR |
| SI1900DL-T1-E3 |
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Hersteller: VISHAY
SOT363
SOT363
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)