SI1900DL-T1-E3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 0.59A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 590mA
Rds On (Max) @ Id, Vgs: 480mOhm @ 590mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SC-70-6
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.37 EUR |
| 6000+ | 0.36 EUR |
| 9000+ | 0.33 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
3000 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details SI1900DL-T1-E3 Vishay Siliconix
Description: MOSFET 2N-CH 30V 0.59A SC70-6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 270mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 590mA, Rds On (Max) @ Id, Vgs: 480mOhm @ 590mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SC-70-6.
Weitere Produktangebote SI1900DL-T1-E3 nach Preis ab 0.31 EUR bis 1.13 EUR
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SI1900DL-T1-E3 | Vishay Semiconductors |
MOSFETs RECOMMENDED ALT SI19 |
auf Bestellung 26992 Stücke: Lieferzeit 10-14 Tag (e) |
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SI1900DL-T1-E3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 0.59A SC70-6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 270mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 590mA Rds On (Max) @ Id, Vgs: 480mOhm @ 590mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SC-70-6 |
auf Bestellung 28730 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SI1900DL-T1-E3 |
|
Hersteller: Vishay Semiconductors
MOSFETs RECOMMENDED ALT SI19
MOSFETs RECOMMENDED ALT SI19
auf Bestellung 26992 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.06 EUR |
| 10+ | 0.73 EUR |
| 100+ | 0.52 EUR |
| 500+ | 0.42 EUR |
| 1000+ | 0.4 EUR |
| 3000+ | 0.32 EUR |
| 6000+ | 0.31 EUR |
| SI1900DL-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 0.59A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 590mA
Rds On (Max) @ Id, Vgs: 480mOhm @ 590mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SC-70-6
Description: MOSFET 2N-CH 30V 0.59A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 590mA
Rds On (Max) @ Id, Vgs: 480mOhm @ 590mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SC-70-6
auf Bestellung 28730 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 19+ | 1.13 EUR |
| 23+ | 0.95 EUR |
| 100+ | 0.65 EUR |
| 500+ | 0.51 EUR |
| 1000+ | 0.42 EUR |