Technische Details SI2305DS-T1-E3-- VISHAY
Description: MOSFET P-CH 8V 3.5A SOT23-3, Packaging: Cut Tape (CT), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Rds On (Max) @ Id, Vgs: 52mOhm @ 3.5A, 4.5V, Vgs(th) (Max) @ Id: 800mV @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Obsolete, Drain to Source Voltage (Vdss): 8 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1245 pF @ 4 V.
Weitere Produktangebote SI2305DS-T1-E3--
| Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis ohne MwSt |
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| SI2305DST1E3 |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI2305DS-T1-E3 | Hersteller : Vishay |
 Trans MOSFET P-CH 8V 3.5A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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SI2305DS-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 8V 3.5A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 3.5A, 4.5V Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Obsolete Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1245 pF @ 4 V |
Produkt ist nicht verfügbar |
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SI2305DS-T1-E3 | Hersteller : Vishay / Siliconix | MOSFET RECOMMENDED ALT SI2305CDS-GE3 |
Produkt ist nicht verfügbar |