SI2305DST1E3

Description: MOSFET P-CH 8V 3.5A SOT23-3, Input Capacitance (Ciss) (Max) @ Vds: 1245 pF @ 4 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V, Drain to Source Voltage (Vdss): 8 V, Part Status: Obsolete, Supplier Device Package: SOT-23-3 (TO-236), Vgs(th) (Max) @ Id: 800mV @ 250µA, Rds On (Max) @ Id, Vgs: 52mOhm @ 3.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Cut Tape (CT).