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SI2307BDS-T1-GE3

SI2307BDS-T1-GE3 Vishay

si2307bd.pdf Hersteller: Vishay
Trans MOSFET P-CH 30V 2.5A 3-Pin SOT-23 T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
3000+0.45 EUR
Mindestbestellmenge: 3000
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Technische Details SI2307BDS-T1-GE3 Vishay

Description: MOSFET P-CH 30V 2.5A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), Rds On (Max) @ Id, Vgs: 78mOhm @ 3.2A, 10V, Power Dissipation (Max): 750mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 15 V.

Weitere Produktangebote SI2307BDS-T1-GE3 nach Preis ab 0.48 EUR bis 1.38 EUR

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SI2307BDS-T1-GE3 SI2307BDS-T1-GE3 Hersteller : Vishay Siliconix si2307bd.pdf Description: MOSFET P-CH 30V 2.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 3.2A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.52 EUR
Mindestbestellmenge: 3000
SI2307BDS-T1-GE3 SI2307BDS-T1-GE3 Hersteller : Vishay Siliconix si2307bd.pdf Description: MOSFET P-CH 30V 2.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 3.2A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 15 V
auf Bestellung 4449 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
19+1.38 EUR
23+ 1.18 EUR
100+ 0.82 EUR
500+ 0.68 EUR
1000+ 0.58 EUR
Mindestbestellmenge: 19
SI2307BDS-T1-GE3 SI2307BDS-T1-GE3 Hersteller : Vishay Semiconductors si2307bd.pdf MOSFET 30V 3.2A 1.25W 78mohm @ 10V
auf Bestellung 98045 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
38+1.38 EUR
44+ 1.19 EUR
100+ 0.82 EUR
500+ 0.69 EUR
1000+ 0.59 EUR
3000+ 0.51 EUR
6000+ 0.48 EUR
Mindestbestellmenge: 38
SI2307BDS-T1-GE3 SI2307BDS-T1-GE3 Hersteller : Vishay 72699.pdf Trans MOSFET P-CH 30V 2.5A 3-Pin SOT-23 T/R
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