SI2307BDS-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 2.5A SOT23-3
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 750mW (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.36 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI2307BDS-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 30V 2.5A SOT23-3, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: SOT-23-3 (TO-236), Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 750mW (Ta), Rds On (Max) @ Id, Vgs: 78mOhm @ 3.2A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide).
Weitere Produktangebote SI2307BDS-T1-GE3 nach Preis ab 0.34 EUR bis 1.46 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SI2307BDS-T1-GE3 | Vishay Semiconductors |
MOSFETs 30V 3.2A 1.25W 78mohm @ 10V |
auf Bestellung 52775 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
SI2307BDS-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 30V 2.5A SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 78mOhm @ 3.2A, 10V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 15 V |
auf Bestellung 4109 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SI2307BDS-T1-GE3 |
![]() |
Hersteller: Vishay Semiconductors
MOSFETs 30V 3.2A 1.25W 78mohm @ 10V
MOSFETs 30V 3.2A 1.25W 78mohm @ 10V
auf Bestellung 52775 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 1.17 EUR |
| 10+ | 0.79 EUR |
| 100+ | 0.54 EUR |
| 500+ | 0.45 EUR |
| 1000+ | 0.39 EUR |
| 3000+ | 0.36 EUR |
| 6000+ | 0.34 EUR |
| SI2307BDS-T1-GE3 |
![]() |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 2.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 3.2A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 15 V
Description: MOSFET P-CH 30V 2.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 3.2A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 15 V
auf Bestellung 4109 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 1.46 EUR |
| 20+ | 0.92 EUR |
| 100+ | 0.6 EUR |
| 500+ | 0.46 EUR |
| 1000+ | 0.41 EUR |

