auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 527+ | 0.3 EUR |
| 576+ | 0.26 EUR |
| 673+ | 0.22 EUR |
| 1000+ | 0.2 EUR |
| 2000+ | 0.18 EUR |
| 6000+ | 0.16 EUR |
Produktrezensionen
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Technische Details SI2308CDS-T1-GE3 Vishay
Description: MOSFET N-CH 60V 2.6A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc), Rds On (Max) @ Id, Vgs: 144mOhm @ 1.9A, 10V, Power Dissipation (Max): 1.6W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 30 V.
Weitere Produktangebote SI2308CDS-T1-GE3 nach Preis ab 0.23 EUR bis 0.92 EUR
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SI2308CDS-T1-GE3 | Hersteller : Vishay Semiconductors |
 MOSFET 60V Vds 20V Vgs SOT-23 |
auf Bestellung 218449 Stücke: Lieferzeit 14-28 Tag (e) |
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SI2308CDS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 1.9A 3-Pin SOT-23 T/R |
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SI2308CDS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 1.9A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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SI2308CDS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 1.9A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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SI2308CDS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 1.9A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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SI2308CDS-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2.6A; Idm: 6A; 1W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.6A Pulsed drain current: 6A Power dissipation: 1W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 144mΩ Mounting: SMD Gate charge: 4nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SI2308CDS-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 2.6A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Rds On (Max) @ Id, Vgs: 144mOhm @ 1.9A, 10V Power Dissipation (Max): 1.6W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 30 V |
Produkt ist nicht verfügbar |
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SI2308CDS-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 2.6A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Rds On (Max) @ Id, Vgs: 144mOhm @ 1.9A, 10V Power Dissipation (Max): 1.6W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 30 V |
Produkt ist nicht verfügbar |
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SI2308CDS-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2.6A; Idm: 6A; 1W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.6A Pulsed drain current: 6A Power dissipation: 1W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 144mΩ Mounting: SMD Gate charge: 4nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |