SI2316DS-T1-E3

SI2316DS-T1-E3

Hersteller: Vishay
Trans MOSFET N-CH 30V 2.9A 3-Pin SOT-23 T/R
si2316ds.pdf si2316ds.pdf
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auf Bestellung 2875 Stücke
Lieferzeit 14-21 Tag (e)
197+ 0.83 EUR
200+ 0.79 EUR
203+ 0.75 EUR
207+ 0.71 EUR
250+ 0.67 EUR
500+ 0.63 EUR
1000+ 0.59 EUR

Technische Details SI2316DS-T1-E3

Description: MOSFET N-CH 30V 2.9A SOT23-3, Rds On (Max) @ Id, Vgs: 50mOhm @ 3.4A, 10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), Drain to Source Voltage (Vdss): 30V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Package / Case: TO-236-3, SC-59, SOT-23-3, Supplier Device Package: SOT-23-3 (TO-236), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 700mW (Ta), Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 15V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V, Vgs(th) (Max) @ Id: 800mV @ 250µA (Min), Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $).

Preis SI2316DS-T1-E3 ab 0.59 EUR bis 0.83 EUR

SI2316DS-T1-E3
Hersteller: Vishay
Trans MOSFET N-CH 30V 2.9A 3-Pin SOT-23 T/R
si2316ds.pdf si2316ds.pdf
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SI2316DS-T1-E3
SI2316DS-T1-E3
Hersteller: Vishay Semiconductors
MOSFET 30V 3.4A 0.96W 50mohm @ 10V
VISH_S_A0010924679_1-2571632.pdf
auf Bestellung 12000 Stücke
Lieferzeit 14-28 Tag (e)
SI2316DS-T1-E3
SI2316DS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 2.9A SOT23-3
Base Part Number: SI2316
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 700mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Vgs(th) (Max) @ Id: 800mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
si2316ds.pdf
auf Bestellung 18000 Stücke
Lieferzeit 21-28 Tag (e)
SI2316DS-T1-E3
SI2316DS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 2.9A SOT23-3
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 700mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Vgs(th) (Max) @ Id: 800mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SI2316
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
si2316ds.pdf
auf Bestellung 20536 Stücke
Lieferzeit 21-28 Tag (e)
SI2316DS-T1-E3
SI2316DS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 2.9A SOT23-3
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 700mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Vgs(th) (Max) @ Id: 800mV @ 250µA (Min)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
si2316ds.pdf
auf Bestellung 34559 Stücke
Lieferzeit 21-28 Tag (e)