SI2316DS-T1-E3
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 2875 Stücke
Lieferzeit 14-21 Tag (e)
auf Bestellung 2875 Stücke
Lieferzeit 14-21 Tag (e)
Technische Details SI2316DS-T1-E3
Description: MOSFET N-CH 30V 2.9A SOT23-3, Rds On (Max) @ Id, Vgs: 50mOhm @ 3.4A, 10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), Drain to Source Voltage (Vdss): 30V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Package / Case: TO-236-3, SC-59, SOT-23-3, Supplier Device Package: SOT-23-3 (TO-236), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 700mW (Ta), Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 15V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V, Vgs(th) (Max) @ Id: 800mV @ 250µA (Min), Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $).
Preis SI2316DS-T1-E3 ab 0.59 EUR bis 0.83 EUR
|
SI2316DS-T1-E3 Hersteller: Vishay Trans MOSFET N-CH 30V 2.9A 3-Pin SOT-23 T/R 
|
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|
|
 Hersteller: Vishay Semiconductors MOSFET 30V 3.4A 0.96W 50mohm @ 10V
|
auf Bestellung 12000 Stücke Lieferzeit 14-28 Tag (e) |
|
|
 Hersteller: Vishay Siliconix Description: MOSFET N-CH 30V 2.9A SOT23-3 Base Part Number: SI2316 Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 700mW (Ta) Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 15V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Vgs(th) (Max) @ Id: 800mV @ 250µA (Min) Rds On (Max) @ Id, Vgs: 50mOhm @ 3.4A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR)
|
auf Bestellung 18000 Stücke Lieferzeit 21-28 Tag (e) |
|
|
|
Hersteller: Vishay Siliconix Description: MOSFET N-CH 30V 2.9A SOT23-3 Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 700mW (Ta) Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 15V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Vgs(th) (Max) @ Id: 800mV @ 250µA (Min) Rds On (Max) @ Id, Vgs: 50mOhm @ 3.4A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Cut Tape (CT) Base Part Number: SI2316 Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236) Mounting Type: Surface Mount
|
auf Bestellung 20536 Stücke Lieferzeit 21-28 Tag (e) |
|
|
 Hersteller: Vishay Siliconix Description: MOSFET N-CH 30V 2.9A SOT23-3 Rds On (Max) @ Id, Vgs: 50mOhm @ 3.4A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 700mW (Ta) Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 15V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Vgs(th) (Max) @ Id: 800mV @ 250µA (Min) Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
|
auf Bestellung 34559 Stücke Lieferzeit 21-28 Tag (e) |
|
|