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SI2316DS-T1-E3

SI2316DS-T1-E3 Vishay


si2316ds.pdf Hersteller: Vishay
Trans MOSFET N-CH 30V 2.9A 3-Pin SOT-23 T/R
auf Bestellung 1018 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis
180+0.82 EUR
181+0.79 EUR
182+0.76 EUR
190+0.70 EUR
250+0.64 EUR
500+0.59 EUR
1000+0.54 EUR
Mindestbestellmenge: 180
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Technische Details SI2316DS-T1-E3 Vishay

Description: MOSFET N-CH 30V 2.9A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), Rds On (Max) @ Id, Vgs: 50mOhm @ 3.4A, 10V, Power Dissipation (Max): 700mW (Ta), Vgs(th) (Max) @ Id: 800mV @ 250µA (Min), Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 15 V.

Weitere Produktangebote SI2316DS-T1-E3 nach Preis ab 0.37 EUR bis 3.01 EUR

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Preis
SI2316DS-T1-E3 SI2316DS-T1-E3 Hersteller : Vishay Siliconix si2316ds.pdf Description: MOSFET N-CH 30V 2.9A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.4A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 800mV @ 250µA (Min)
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 15 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.82 EUR
6000+0.76 EUR
Mindestbestellmenge: 3000
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SI2316DS-T1-E3 SI2316DS-T1-E3 Hersteller : VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE89AAFEACF7E42B3D7&compId=si2316ds.pdf?ci_sign=64f19be8f1f1d21953ac2b194d8b787a604a84f6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.3A; Idm: 16A; 0.96W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 2.3A
On-state resistance: 85mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.96W
Polarisation: unipolar
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 16A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 982 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
80+0.90 EUR
141+0.51 EUR
160+0.45 EUR
182+0.39 EUR
192+0.37 EUR
Mindestbestellmenge: 80
Im Einkaufswagen  Stück im Wert von  UAH
SI2316DS-T1-E3 SI2316DS-T1-E3 Hersteller : VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE89AAFEACF7E42B3D7&compId=si2316ds.pdf?ci_sign=64f19be8f1f1d21953ac2b194d8b787a604a84f6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.3A; Idm: 16A; 0.96W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 2.3A
On-state resistance: 85mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.96W
Polarisation: unipolar
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 16A
auf Bestellung 982 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
80+0.90 EUR
141+0.51 EUR
160+0.45 EUR
182+0.39 EUR
192+0.37 EUR
Mindestbestellmenge: 80
Im Einkaufswagen  Stück im Wert von  UAH
SI2316DS-T1-E3 SI2316DS-T1-E3 Hersteller : Vishay si2316ds.pdf Trans MOSFET N-CH 30V 2.9A 3-Pin SOT-23 T/R
auf Bestellung 1018 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
166+0.90 EUR
180+0.79 EUR
181+0.76 EUR
182+0.73 EUR
190+0.67 EUR
250+0.61 EUR
500+0.56 EUR
1000+0.54 EUR
Mindestbestellmenge: 166
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SI2316DS-T1-E3 SI2316DS-T1-E3 Hersteller : Vishay Semiconductors si2316ds.pdf MOSFETs 30V 3.4A 0.96W 50mohm @ 10V
auf Bestellung 4142 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.34 EUR
10+1.62 EUR
100+1.21 EUR
500+1.01 EUR
1000+0.88 EUR
3000+0.81 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
SI2316DS-T1-E3 SI2316DS-T1-E3 Hersteller : Vishay Siliconix si2316ds.pdf Description: MOSFET N-CH 30V 2.9A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.4A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 800mV @ 250µA (Min)
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 15 V
auf Bestellung 10192 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.01 EUR
10+1.91 EUR
100+1.29 EUR
500+1.02 EUR
1000+0.93 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH