SI2316DS-T1-E3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 2.9A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.4A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 800mV @ 250µA (Min)
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 15 V
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.98 EUR |
| 6000+ | 0.9 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
3000 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details SI2316DS-T1-E3 Vishay Siliconix
Description: MOSFET N-CH 30V 2.9A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), Rds On (Max) @ Id, Vgs: 50mOhm @ 3.4A, 10V, Power Dissipation (Max): 700mW (Ta), Vgs(th) (Max) @ Id: 800mV @ 250µA (Min), Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 15 V.
Weitere Produktangebote SI2316DS-T1-E3 nach Preis ab 0.64 EUR bis 3.58 EUR
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SI2316DS-T1-E3 | Vishay |
Trans MOSFET N-CH 30V 2.9A 3-Pin SOT-23 T/R |
auf Bestellung 1018 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2316DS-T1-E3 | Vishay |
Trans MOSFET N-CH 30V 2.9A 3-Pin SOT-23 T/R |
auf Bestellung 1018 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2316DS-T1-E3 | Vishay Semiconductors |
MOSFETs 30V 3.4A 0.96W 50mohm @ 10V |
auf Bestellung 3742 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2316DS-T1-E3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 2.9A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 3.4A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 800mV @ 250µA (Min) Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 15 V |
auf Bestellung 10192 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SI2316DS-T1-E3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 30V 2.9A 3-Pin SOT-23 T/R
Trans MOSFET N-CH 30V 2.9A 3-Pin SOT-23 T/R
auf Bestellung 1018 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 180+ | 0.99 EUR |
| 181+ | 0.98 EUR |
| 182+ | 0.94 EUR |
| 190+ | 0.88 EUR |
| 250+ | 0.83 EUR |
| 500+ | 0.79 EUR |
| 1000+ | 0.74 EUR |
| SI2316DS-T1-E3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 30V 2.9A 3-Pin SOT-23 T/R
Trans MOSFET N-CH 30V 2.9A 3-Pin SOT-23 T/R
auf Bestellung 1018 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 166+ | 1.08 EUR |
| 180+ | 0.95 EUR |
| 181+ | 0.92 EUR |
| 182+ | 0.87 EUR |
| 190+ | 0.81 EUR |
| 250+ | 0.74 EUR |
| 500+ | 0.68 EUR |
| 1000+ | 0.64 EUR |
| SI2316DS-T1-E3 |
|
Hersteller: Vishay Semiconductors
MOSFETs 30V 3.4A 0.96W 50mohm @ 10V
MOSFETs 30V 3.4A 0.96W 50mohm @ 10V
auf Bestellung 3742 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.98 EUR |
| 10+ | 2 EUR |
| 100+ | 1.44 EUR |
| 500+ | 1.14 EUR |
| 1000+ | 1.01 EUR |
| 3000+ | 0.92 EUR |
| 6000+ | 0.88 EUR |
| SI2316DS-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 2.9A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.4A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 800mV @ 250µA (Min)
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 15 V
Description: MOSFET N-CH 30V 2.9A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.4A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 800mV @ 250µA (Min)
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 15 V
auf Bestellung 10192 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.58 EUR |
| 10+ | 2.27 EUR |
| 100+ | 1.54 EUR |
| 500+ | 1.21 EUR |
| 1000+ | 1.11 EUR |