SI2333CDS-T1-E3
Technische Details SI2333CDS-T1-E3
Description: MOSFET P-CH 12V 7.1A SOT23-3, Base Part Number: SI2333, Package / Case: TO-236-3, SC-59, SOT-23-3, Supplier Device Package: SOT-23-3 (TO-236), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1225pF @ 6V, Vgs (Max): ±8V, Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Rds On (Max) @ Id, Vgs: 35mOhm @ 5.1A, 4.5V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc), Drain to Source Voltage (Vdss): 12V, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Part Status: Active, Packaging: Tape & Reel (TR), Manufacturer: Vishay Siliconix.
Preis SI2333CDS-T1-E3 ab 0 EUR bis 0 EUR
SI2333CDS-T1-E3 Hersteller: Vishay Trans MOSFET P-CH 12V 7.1A 3-Pin SOT-23 T/R ![]() |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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SI2333CDS-T1-E3 Hersteller: Vishay Trans MOSFET P-CH 12V 7.1A 3-Pin SOT-23 T/R ![]() ![]() |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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SI2333CDS-T1-E3 Hersteller: Vishay Semiconductors MOSFET 12V 5.1A 2.5W 35mohm @ 4.5V ![]() |
auf Bestellung 85012 Stücke ![]() Lieferzeit 14-28 Tag (e) |
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SI2333CDS-T1-E3 Hersteller: Vishay Trans MOSFET P-CH 12V 7.1A 3-Pin SOT-23 T/R ![]() ![]() |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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SI2333CDS-T1-E3 Hersteller: Vishay Siliconix Description: MOSFET P-CH 12V 7.1A SOT23-3 Base Part Number: SI2333 Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1225pF @ 6V Vgs (Max): ±8V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 35mOhm @ 5.1A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc) Drain to Source Voltage (Vdss): 12V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix ![]() |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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SI2333CDS-T1-E3 Hersteller: Vishay Siliconix Description: MOSFET P-CH 12V 7.1A SOT23-3 Input Capacitance (Ciss) (Max) @ Vds: 1225pF @ 6V Vgs (Max): ±8V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 35mOhm @ 5.1A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc) Drain to Source Voltage (Vdss): 12V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc) ![]() |
auf Bestellung 39601 Stücke ![]() Lieferzeit 21-28 Tag (e) |
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SI2333CDS-T1-E3 Hersteller: Vishay Siliconix Description: MOSFET P-CH 12V 7.1A SOT23-3 Base Part Number: SI2333 Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1225pF @ 6V Vgs (Max): ±8V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 35mOhm @ 5.1A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc) Drain to Source Voltage (Vdss): 12V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Cut Tape (CT) Manufacturer: Vishay Siliconix ![]() |
auf Bestellung 8071 Stücke ![]() Lieferzeit 21-28 Tag (e) |
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