SI2333CDS-T1-E3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 7.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.1A, 4.5V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 6 V
| Anzahl | Preis |
|---|---|
| 3000+ | 0.46 EUR |
| 6000+ | 0.42 EUR |
| 9000+ | 0.4 EUR |
| 15000+ | 0.38 EUR |
| 21000+ | 0.37 EUR |
| 30000+ | 0.36 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI2333CDS-T1-E3 Vishay Siliconix
Description: VISHAY - SI2333CDS-T1-E3 - MOSFET, P CHANNEL, -12V, -7.1A, TO-236-3, tariffCode: 85412900, Transistormontage: Surface Mount, Drain-Source-Spannung Vds: 12V, rohsCompliant: YES, Dauer-Drainstrom Id: 7.1A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, MSL: -, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 400mV, euEccn: NLR, Verlustleistung: 2.5W, Bauform - Transistor: SOT-23, Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Kanaltyp: P Channel, Rds(on)-Prüfspannung: 4.5V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 35mohm, directShipCharge: 25, SVHC: No SVHC (25-Jun-2025).
Weitere Produktangebote SI2333CDS-T1-E3 nach Preis ab 0.36 EUR bis 1.83 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SI2333CDS-T1-E3 | Vishay |
Trans MOSFET P-CH 12V 7.1A 3-Pin SOT-23 T/R |
auf Bestellung 2968 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
|
SI2333CDS-T1-E3 | Vishay |
Trans MOSFET P-CH 12V 7.1A 3-Pin SOT-23 T/R |
auf Bestellung 2990 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
SI2333CDS-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -5.7A; Idm: -20A Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -5.7A Pulsed drain current: -20A Power dissipation: 2.5W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 35mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® |
auf Bestellung 2968 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
SI2333CDS-T1-E3 | Vishay Semiconductors |
MOSFETs 12V 5.1A 2.5W 35mohm @ 4.5V |
auf Bestellung 37589 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
SI2333CDS-T1-E3 | Vishay Siliconix |
Description: MOSFET P-CH 12V 7.1A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 5.1A, 4.5V Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 6 V |
auf Bestellung 34097 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
SI2333CDS-T1-E3 | VISHAY |
Description: VISHAY - SI2333CDS-T1-E3 - MOSFET, P CHANNEL, -12V, -7.1A, TO-236-3 tariffCode: 85412900 Transistormontage: Surface Mount Drain-Source-Spannung Vds: 12V rohsCompliant: YES Dauer-Drainstrom Id: 7.1A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 400mV euEccn: NLR Verlustleistung: 2.5W Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: P Channel Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 35mohm directShipCharge: 25 SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 7461 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SI2333CDS-T1-E3 |
|
auf Bestellung 16000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SI2333CDS-T1-E3 |
|
Hersteller: Vishay
Trans MOSFET P-CH 12V 7.1A 3-Pin SOT-23 T/R
Trans MOSFET P-CH 12V 7.1A 3-Pin SOT-23 T/R
auf Bestellung 2968 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 228+ | 0.64 EUR |
| 250+ | 0.59 EUR |
| SI2333CDS-T1-E3 |
|
Hersteller: Vishay
Trans MOSFET P-CH 12V 7.1A 3-Pin SOT-23 T/R
Trans MOSFET P-CH 12V 7.1A 3-Pin SOT-23 T/R
auf Bestellung 2990 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 185+ | 0.78 EUR |
| 247+ | 0.58 EUR |
| 500+ | 0.46 EUR |
| 1000+ | 0.41 EUR |
| SI2333CDS-T1-E3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -5.7A; Idm: -20A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -5.7A
Pulsed drain current: -20A
Power dissipation: 2.5W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -5.7A; Idm: -20A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -5.7A
Pulsed drain current: -20A
Power dissipation: 2.5W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
auf Bestellung 2968 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 62+ | 1.16 EUR |
| 75+ | 0.96 EUR |
| 89+ | 0.81 EUR |
| 118+ | 0.61 EUR |
| 150+ | 0.48 EUR |
| 186+ | 0.38 EUR |
| 250+ | 0.36 EUR |
| SI2333CDS-T1-E3 |
|
Hersteller: Vishay Semiconductors
MOSFETs 12V 5.1A 2.5W 35mohm @ 4.5V
MOSFETs 12V 5.1A 2.5W 35mohm @ 4.5V
auf Bestellung 37589 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.83 EUR |
| 10+ | 1.14 EUR |
| 100+ | 0.75 EUR |
| 500+ | 0.58 EUR |
| 1000+ | 0.53 EUR |
| 3000+ | 0.42 EUR |
| SI2333CDS-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 7.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.1A, 4.5V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 6 V
Description: MOSFET P-CH 12V 7.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.1A, 4.5V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 6 V
auf Bestellung 34097 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10+ | 1.83 EUR |
| 16+ | 1.14 EUR |
| 100+ | 0.75 EUR |
| 500+ | 0.58 EUR |
| 1000+ | 0.53 EUR |
| SI2333CDS-T1-E3 |
|
Hersteller: VISHAY
Description: VISHAY - SI2333CDS-T1-E3 - MOSFET, P CHANNEL, -12V, -7.1A, TO-236-3
tariffCode: 85412900
Transistormontage: Surface Mount
Drain-Source-Spannung Vds: 12V
rohsCompliant: YES
Dauer-Drainstrom Id: 7.1A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 400mV
euEccn: NLR
Verlustleistung: 2.5W
Bauform - Transistor: SOT-23
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: P Channel
Rds(on)-Prüfspannung: 4.5V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 35mohm
directShipCharge: 25
SVHC: No SVHC (25-Jun-2025)
Description: VISHAY - SI2333CDS-T1-E3 - MOSFET, P CHANNEL, -12V, -7.1A, TO-236-3
tariffCode: 85412900
Transistormontage: Surface Mount
Drain-Source-Spannung Vds: 12V
rohsCompliant: YES
Dauer-Drainstrom Id: 7.1A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 400mV
euEccn: NLR
Verlustleistung: 2.5W
Bauform - Transistor: SOT-23
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: P Channel
Rds(on)-Prüfspannung: 4.5V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 35mohm
directShipCharge: 25
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 7461 Stücke:
Lieferzeit 14-21 Tag (e)
| SI2333CDS-T1-E3 |
|
auf Bestellung 16000 Stücke:
Lieferzeit 21-28 Tag (e)