auf Bestellung 45000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.25 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI2333CDS-T1-GE3 Vishay
Description: MOSFET P-CH 12V 7.1A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc), Rds On (Max) @ Id, Vgs: 35mOhm @ 5.1A, 4.5V, Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 6 V.
Weitere Produktangebote SI2333CDS-T1-GE3 nach Preis ab 0.24 EUR bis 1.52 EUR
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SI2333CDS-T1-GE3 | Hersteller : Vishay |
 Trans MOSFET P-CH 12V 7.1A 3-Pin SOT-23 T/R |
auf Bestellung 42000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2333CDS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 12V 7.1A 3-Pin SOT-23 T/R |
auf Bestellung 42000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2333CDS-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 12V 7.1A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 5.1A, 4.5V Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 6 V |
auf Bestellung 18000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI2333CDS-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 12V 7.1A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 5.1A, 4.5V Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 6 V |
auf Bestellung 21740 Stücke: Lieferzeit 21-28 Tag (e) |
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SI2333CDS-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET 12V 5.1A 2.5W 35 mohms @ 4.5V |
auf Bestellung 52353 Stücke: Lieferzeit 14-28 Tag (e) |
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SI2333CDS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 12V 7.1A 3-Pin SOT-23 T/R |
auf Bestellung 42000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2333CDS-T1-GE3 Produktcode: 183755 |
Transistoren > Transistoren P-Kanal-Feld |
Produkt ist nicht verfügbar
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SI2333CDS-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -5.7A; Idm: -20A; 1.6W; SOT23 On-state resistance: 35mΩ Mounting: SMD Pulsed drain current: -20A Power dissipation: 1.6W Gate charge: 25nC Polarisation: unipolar Drain current: -5.7A Kind of channel: enhanced Drain-source voltage: -12V Type of transistor: P-MOSFET Gate-source voltage: ±8V Kind of package: reel; tape Case: SOT23 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SI2333CDS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 12V 7.1A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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SI2333CDS-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -5.7A; Idm: -20A; 1.6W; SOT23 On-state resistance: 35mΩ Mounting: SMD Pulsed drain current: -20A Power dissipation: 1.6W Gate charge: 25nC Polarisation: unipolar Drain current: -5.7A Kind of channel: enhanced Drain-source voltage: -12V Type of transistor: P-MOSFET Gate-source voltage: ±8V Kind of package: reel; tape Case: SOT23 |
Produkt ist nicht verfügbar |