SI2333CDS-T1-GE3
Produktcode: 183755
zu Favoriten hinzufügen
Lieblingsprodukt
Hersteller:
Transistoren > Transistoren P-Kanal-Feld
Produktrezensionen
Produktbewertung abgeben
Weitere Produktangebote SI2333CDS-T1-GE3 nach Preis ab 0.28 EUR bis 1.71 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SI2333CDS-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 12V 7.1A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 5.1A, 4.5V Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 6 V |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
SI2333CDS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 12V 7.1A 3-Pin SOT-23 T/R |
auf Bestellung 1925 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
SI2333CDS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 12V 7.1A 3-Pin SOT-23 T/R |
auf Bestellung 1925 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
SI2333CDS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 12V 7.1A 3-Pin SOT-23 T/R |
auf Bestellung 1940 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
SI2333CDS-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -5.7A; Idm: -20A; 2.5W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -5.7A Pulsed drain current: -20A Power dissipation: 2.5W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 35mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1940 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
SI2333CDS-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFETs 12V 5.1A 2.5W 35 mohms @ 4.5V |
auf Bestellung 9652 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
SI2333CDS-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 12V 7.1A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 5.1A, 4.5V Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 6 V |
auf Bestellung 10970 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
SI2333CDS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 12V 7.1A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |