SI2333CDS-T1-GE3
Produktcode: 183755
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Weitere Produktangebote SI2333CDS-T1-GE3 nach Preis ab 0.28 EUR bis 1.83 EUR
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SI2333CDS-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 12V 7.1A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 5.1A, 4.5V Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 6 V |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2333CDS-T1-GE3 | Vishay |
Trans MOSFET P-CH 12V 7.1A 3-Pin SOT-23 T/R |
auf Bestellung 1925 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2333CDS-T1-GE3 | Vishay |
Trans MOSFET P-CH 12V 7.1A 3-Pin SOT-23 T/R |
auf Bestellung 1925 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2333CDS-T1-GE3 | Vishay |
Trans MOSFET P-CH 12V 7.1A 3-Pin SOT-23 T/R |
auf Bestellung 1848 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2333CDS-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -5.7A; Idm: -20A; 2.5W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -5.7A Pulsed drain current: -20A Power dissipation: 2.5W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 35mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1823 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2333CDS-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 12V 7.1A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 5.1A, 4.5V Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 6 V |
auf Bestellung 10970 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2333CDS-T1-GE3 | Vishay Semiconductors |
MOSFETs 12V 5.1A 2.5W 35 mohms @ 4.5V |
auf Bestellung 9578 Stücke: Lieferzeit 10-14 Tag (e) |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 7.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.1A, 4.5V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 6 V
Description: MOSFET P-CH 12V 7.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.1A, 4.5V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 6 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.43 EUR |
| 6000+ | 0.4 EUR |
| 9000+ | 0.38 EUR |
| SI2333CDS-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET P-CH 12V 7.1A 3-Pin SOT-23 T/R
Trans MOSFET P-CH 12V 7.1A 3-Pin SOT-23 T/R
auf Bestellung 1925 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 236+ | 0.61 EUR |
| 238+ | 0.6 EUR |
| 288+ | 0.49 EUR |
| 290+ | 0.47 EUR |
| 500+ | 0.4 EUR |
| 1000+ | 0.34 EUR |
| SI2333CDS-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET P-CH 12V 7.1A 3-Pin SOT-23 T/R
Trans MOSFET P-CH 12V 7.1A 3-Pin SOT-23 T/R
auf Bestellung 1925 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 199+ | 0.73 EUR |
| 236+ | 0.59 EUR |
| 238+ | 0.56 EUR |
| 288+ | 0.45 EUR |
| 290+ | 0.43 EUR |
| 500+ | 0.36 EUR |
| 1000+ | 0.29 EUR |
| SI2333CDS-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET P-CH 12V 7.1A 3-Pin SOT-23 T/R
Trans MOSFET P-CH 12V 7.1A 3-Pin SOT-23 T/R
auf Bestellung 1848 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 142+ | 1.02 EUR |
| 205+ | 0.7 EUR |
| 250+ | 0.56 EUR |
| 500+ | 0.48 EUR |
| 1000+ | 0.44 EUR |
| SI2333CDS-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5.7A; Idm: -20A; 2.5W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -5.7A
Pulsed drain current: -20A
Power dissipation: 2.5W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5.7A; Idm: -20A; 2.5W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -5.7A
Pulsed drain current: -20A
Power dissipation: 2.5W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1823 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 62+ | 1.16 EUR |
| 90+ | 0.8 EUR |
| 116+ | 0.62 EUR |
| 167+ | 0.43 EUR |
| 250+ | 0.35 EUR |
| 500+ | 0.31 EUR |
| 1000+ | 0.28 EUR |
| SI2333CDS-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 7.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.1A, 4.5V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 6 V
Description: MOSFET P-CH 12V 7.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.1A, 4.5V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 6 V
auf Bestellung 10970 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 11+ | 1.71 EUR |
| 17+ | 1.07 EUR |
| 100+ | 0.7 EUR |
| 500+ | 0.54 EUR |
| 1000+ | 0.49 EUR |
| SI2333CDS-T1-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs 12V 5.1A 2.5W 35 mohms @ 4.5V
MOSFETs 12V 5.1A 2.5W 35 mohms @ 4.5V
auf Bestellung 9578 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.83 EUR |
| 10+ | 1.14 EUR |
| 100+ | 0.75 EUR |
| 500+ | 0.58 EUR |
| 1000+ | 0.53 EUR |
| 3000+ | 0.46 EUR |
| 6000+ | 0.42 EUR |