SI2333DDS-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CH 12V 6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.2W (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1275 pF @ 6 V
auf Bestellung 31000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.32 EUR |
| 6000+ | 0.31 EUR |
| 9000+ | 0.29 EUR |
| 30000+ | 0.28 EUR |
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Technische Details SI2333DDS-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 12V 6A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 4.5V, Power Dissipation (Max): 1.2W (Ta), 1.7W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 1275 pF @ 6 V.
Weitere Produktangebote SI2333DDS-T1-GE3 nach Preis ab 0.22 EUR bis 0.96 EUR
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SI2333DDS-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -5.2A; Idm: -20A; 1.1W; SOT23 Mounting: SMD Polarisation: unipolar Case: SOT23 Pulsed drain current: -20A Power dissipation: 1.1W Gate charge: 35nC Drain current: -5.2A Kind of channel: enhanced Drain-source voltage: -12V Type of transistor: P-MOSFET Gate-source voltage: ±8V Kind of package: reel; tape On-state resistance: 0.15Ω Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1648 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2333DDS-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -5.2A; Idm: -20A; 1.1W; SOT23 Mounting: SMD Polarisation: unipolar Case: SOT23 Pulsed drain current: -20A Power dissipation: 1.1W Gate charge: 35nC Drain current: -5.2A Kind of channel: enhanced Drain-source voltage: -12V Type of transistor: P-MOSFET Gate-source voltage: ±8V Kind of package: reel; tape On-state resistance: 0.15Ω |
auf Bestellung 1648 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2333DDS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 12V 6A 3-Pin SOT-23 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2333DDS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 12V 6A 3-Pin SOT-23 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2333DDS-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET -12V Vds 8V Vgs SOT-23 |
auf Bestellung 148735 Stücke: Lieferzeit 14-28 Tag (e) |
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SI2333DDS-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 12V 6A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 4.5V Power Dissipation (Max): 1.2W (Ta), 1.7W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1275 pF @ 6 V |
auf Bestellung 31184 Stücke: Lieferzeit 21-28 Tag (e) |
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SI2333DDS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 12V 6A 3-Pin SOT-23 T/R |
auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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P-MOSFET 12V 6A 1.2W SI2333DDS-T1-GE3 Vishay TSI2333dds |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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| SI2333DDS-T1-GE3 | Hersteller : Vishay Siliconix |
P-Channel 12V 6A (Tc) 1.2W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236) |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2333DDS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 12V 6A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |