auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.23 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI2342DS-T1-GE3 Vishay
Description: MOSFET N-CH 8V 6A SOT-23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 17mOhm @ 7.2A, 4.5V, Power Dissipation (Max): 2.5W (Tc), Vgs(th) (Max) @ Id: 800mV @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±5V, Drain to Source Voltage (Vdss): 8 V, Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 4 V.
Weitere Produktangebote SI2342DS-T1-GE3 nach Preis ab 0.24 EUR bis 1.19 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
SI2342DS-T1-GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 8V 6A 3-Pin SOT-23 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
SI2342DS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 8V 6A 3-Pin SOT-23 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
SI2342DS-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 8V; 6A; Idm: 30A; 1.6W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Power dissipation: 1.6W Polarisation: unipolar Gate charge: 15.8nC Kind of channel: enhanced Gate-source voltage: ±5V Pulsed drain current: 30A Drain-source voltage: 8V Drain current: 6A On-state resistance: 17mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||||
|
|
SI2342DS-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 8V; 6A; Idm: 30A; 1.6W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Power dissipation: 1.6W Polarisation: unipolar Gate charge: 15.8nC Kind of channel: enhanced Gate-source voltage: ±5V Pulsed drain current: 30A Drain-source voltage: 8V Drain current: 6A On-state resistance: 17mΩ Type of transistor: N-MOSFET |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
SI2342DS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 8V 6A 3-Pin SOT-23 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
SI2342DS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 8V 6A 3-Pin SOT-23 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
SI2342DS-T1-GE3 | Hersteller : Vishay / Siliconix |
MOSFET 8V Vds 5V Vgs SOT-23 |
auf Bestellung 205604 Stücke: Lieferzeit 14-28 Tag (e) |
|
||||||||||||||||
|
|
SI2342DS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 8V 6A 3-Pin SOT-23 T/R |
auf Bestellung 70 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
|
|
SI2342DS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 8V 6A 3-Pin SOT-23 T/R |
auf Bestellung 70 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
 |
SI2342DS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 8V 6A 3-Pin SOT-23 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
 |
SI2342DS-T1-GE3 Produktcode: 86440 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
|
||||||||||||||||||
 |
SI2342DS-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 8V 6A SOT-23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 7.2A, 4.5V Power Dissipation (Max): 2.5W (Tc) Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±5V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 4 V |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
SI2342DS-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 8V 6A SOT-23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 7.2A, 4.5V Power Dissipation (Max): 2.5W (Tc) Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±5V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 4 V |
Produkt ist nicht verfügbar |