SI2351DS-T1-GE3

SI2351DS-T1-GE3

SI2351DS-T1-GE3

Hersteller: Vishay / Siliconix
MOSFET RECOMMENDED ALT 781-SI2301CDS-T1-GE3
si2351ds-1766028.pdf
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Technische Details SI2351DS-T1-GE3

Description: MOSFET P-CH 20V 2.8A SOT23-3, Packaging: Cut Tape (CT), Part Status: Obsolete, FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc), Rds On (Max) @ Id, Vgs: 115mOhm @ 2.4A, 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 5V, Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V, Mounting Type: Surface Mount, Supplier Device Package: SOT-23-3 (TO-236), Package / Case: TO-236-3, SC-59, SOT-23-3.

Preis SI2351DS-T1-GE3 ab 0 EUR bis 0 EUR

SI2351DS-T1-GE3
SI2351DS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2.8A SOT23-3
Packaging: Cut Tape (CT)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
si2351ds.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen