auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
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6000+ | 0.16 EUR |
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Technische Details SI2369BDS-T1-GE3 Vishay
Description: MOSFET P-CH 30V 5.6A/7.5A SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), 7.5A (Tc), Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 10V, Power Dissipation (Max): 1.3W (Ta), 2.5W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +16V, -20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 745 pF @ 15 V.
Weitere Produktangebote SI2369BDS-T1-GE3 nach Preis ab 0.16 EUR bis 0.84 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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SI2369BDS-T1-GE3 | Hersteller : Vishay | Trans MOSFET P-CH 30V 7.5A 3-Pin SOT-23 T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2369BDS-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 30V 5.6A/7.5A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), 7.5A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 10V Power Dissipation (Max): 1.3W (Ta), 2.5W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +16V, -20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 745 pF @ 15 V |
auf Bestellung 24000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2369BDS-T1-GE3 | Hersteller : Vishay Semiconductors | MOSFETs 30-V (D-S) MOSFET P-CHANNEL |
auf Bestellung 395637 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2369BDS-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 30V 5.6A/7.5A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), 7.5A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 10V Power Dissipation (Max): 1.3W (Ta), 2.5W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +16V, -20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 745 pF @ 15 V |
auf Bestellung 28801 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2369BDS-T1-GE3 | Hersteller : VISHAY |
Description: VISHAY - SI2369BDS-T1-GE3 - Leistungs-MOSFET, p-Kanal, 30 V, 7.5 A, 0.0225 ohm, SOT-23, Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30 Dauer-Drainstrom Id: 7.5 Qualifikation: - MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 2.5 Gate-Source-Schwellenspannung, max.: 2.2 Verlustleistung: 2.5 Bauform - Transistor: SOT-23 Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 3 Produktpalette: TrenchFET Gen IV Wandlerpolarität: p-Kanal Kanaltyp: p-Kanal Betriebswiderstand, Rds(on): 0.0225 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 150 Drain-Source-Durchgangswiderstand: 0.0225 SVHC: No SVHC (10-Jun-2022) |
auf Bestellung 544 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2369BDS-T1-GE3 | Hersteller : Vishay | Trans MOSFET P-CH 30V 7.5A 3-Pin SOT-23 T/R |
auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2369BDS-T1-GE3 | Hersteller : Vishay | Trans MOSFET P-CH 30V 7.5A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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SI2369BDS-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -7.5A; Idm: -50A Drain-source voltage: -30V Drain current: -7.5A On-state resistance: 39mΩ Type of transistor: P-MOSFET Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 19.5nC Technology: TrenchFET® Kind of channel: enhanced Pulsed drain current: -50A Mounting: SMD Case: SOT23 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SI2369BDS-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -7.5A; Idm: -50A Drain-source voltage: -30V Drain current: -7.5A On-state resistance: 39mΩ Type of transistor: P-MOSFET Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 19.5nC Technology: TrenchFET® Kind of channel: enhanced Pulsed drain current: -50A Mounting: SMD Case: SOT23 |
Produkt ist nicht verfügbar |