auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.13 EUR |
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Technische Details SI2371EDS-T1-GE3 Vishay
Description: MOSFET P-CH 30V 4.8A SOT-23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc), Rds On (Max) @ Id, Vgs: 45mOhm @ 3.7A, 10V, Power Dissipation (Max): 1W (Ta), 1.7W (Tc), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SOT-23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V.
Weitere Produktangebote SI2371EDS-T1-GE3 nach Preis ab 0.15 EUR bis 1.12 EUR
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SI2371EDS-T1-GE3 | Hersteller : Vishay |
 Trans MOSFET P-CH 30V 3.7A 3-Pin SOT-23 T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2371EDS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 3.7A 3-Pin SOT-23 T/R |
auf Bestellung 1990 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2371EDS-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET -30V Vds 12V Vgs SOT-23 |
auf Bestellung 209033 Stücke: Lieferzeit 14-28 Tag (e) |
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SI2371EDS-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 30V 4.8A SOT-23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 3.7A, 10V Power Dissipation (Max): 1W (Ta), 1.7W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V |
auf Bestellung 847 Stücke: Lieferzeit 21-28 Tag (e) |
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SI2371EDS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 4.8A 3-Pin SOT-23 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2371EDS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 3.7A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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SI2371EDS-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -4.8A; Idm: -20A; 1.1W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -4.8A Pulsed drain current: -20A Power dissipation: 1.1W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 45mΩ Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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SI2371EDS-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 30V 4.8A SOT-23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 3.7A, 10V Power Dissipation (Max): 1W (Ta), 1.7W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V |
Produkt ist nicht verfügbar |
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SI2371EDS-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -4.8A; Idm: -20A; 1.1W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -4.8A Pulsed drain current: -20A Power dissipation: 1.1W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 45mΩ Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |