Produkte > VISHAY SILICONIX > Si3424BDV-T1-GE3
Si3424BDV-T1-GE3

Si3424BDV-T1-GE3 Vishay Siliconix

si3424bd.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
Power Dissipation (Max): 2.1W (Ta), 2.98W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.48 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details Si3424BDV-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 30V 8A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V, Power Dissipation (Max): 2.1W (Ta), 2.98W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 6-TSOP, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 19.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 15 V.

Weitere Produktangebote Si3424BDV-T1-GE3 nach Preis ab 0.43 EUR bis 1.45 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
Si3424BDV-T1-GE3 Si3424BDV-T1-GE3 Hersteller : Vishay Siliconix si3424bd.pdf Description: MOSFET N-CH 30V 8A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
Power Dissipation (Max): 2.1W (Ta), 2.98W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 15 V
auf Bestellung 5445 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
19+1.43 EUR
22+ 1.21 EUR
100+ 0.84 EUR
500+ 0.66 EUR
1000+ 0.53 EUR
Mindestbestellmenge: 19
Si3424BDV-T1-GE3 Si3424BDV-T1-GE3 Hersteller : Vishay / Siliconix si3424bd.pdf MOSFET 30V 8.0A 2.98W 28mohm @ 10V
auf Bestellung 58673 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
36+1.45 EUR
43+ 1.23 EUR
100+ 0.86 EUR
500+ 0.67 EUR
1000+ 0.54 EUR
3000+ 0.47 EUR
9000+ 0.43 EUR
Mindestbestellmenge: 36
Si3424BDV-T1-GE3 si3424bd.pdf
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)