Si3424BDV-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 8A 6TSOP
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 19.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 2.98W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 15 V
| Anzahl | Preis |
|---|---|
| 3000+ | 0.32 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details Si3424BDV-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 30V 8A 6TSOP, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR), Gate Charge (Qg) (Max) @ Vgs: 19.6 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 6-TSOP, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 2.1W (Ta), 2.98W (Tc), Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), FET Type: N-Channel, Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 15 V.
Weitere Produktangebote Si3424BDV-T1-GE3 nach Preis ab 0.29 EUR bis 0.98 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Si3424BDV-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 8A 6TSOP Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 19.6 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 6-TSOP Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.1W (Ta), 2.98W (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) |
auf Bestellung 5445 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
Si3424BDV-T1-GE3 | Vishay / Siliconix |
MOSFET 30V 8.0A 2.98W 28mohm @ 10V |
auf Bestellung 58673 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
| Si3424BDV-T1-GE3 |
|
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| Si3424BDV-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 8A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 19.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 2.98W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 8A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 19.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 2.98W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 5445 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 19+ | 0.97 EUR |
| 22+ | 0.82 EUR |
| 100+ | 0.57 EUR |
| 500+ | 0.44 EUR |
| 1000+ | 0.36 EUR |
| Si3424BDV-T1-GE3 |
|
Hersteller: Vishay / Siliconix
MOSFET 30V 8.0A 2.98W 28mohm @ 10V
MOSFET 30V 8.0A 2.98W 28mohm @ 10V
auf Bestellung 58673 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 0.98 EUR |
| 10+ | 0.83 EUR |
| 100+ | 0.58 EUR |
| 500+ | 0.45 EUR |
| 1000+ | 0.37 EUR |
| 3000+ | 0.31 EUR |
| 9000+ | 0.29 EUR |
| Si3424BDV-T1-GE3 |
|
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH