SI3438DV-T1-E3

SI3438DV-T1-E3

Hersteller: VISHAY
SOT26/SOT363
si3438dv.pdf si3438dv.pdf
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Technische Details SI3438DV-T1-E3

Description: MOSFET N-CH 40V 7.4A 6TSOP, Rds On (Max) @ Id, Vgs: 35.5mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 6-TSOP, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 2W (Ta), 3.5W (Tc).

Preis SI3438DV-T1-E3 ab 0 EUR bis 0 EUR

SI3438DV-T1-E3
Hersteller: VISHAY
SOT26
si3438dv.pdf si3438dv.pdf
39990 Stücke
SI3438DV-T1-E3
Hersteller:

si3438dv.pdf si3438dv.pdf
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SI3438DV-T1-E3
SI3438DV-T1-E3
Hersteller: Vishay / Siliconix
MOSFET 40V Vds 20V Vgs TSOP-6
VISH_S_A0001142651_1-2567296.pdf
auf Bestellung 939 Stücke
Lieferzeit 14-28 Tag (e)
SI3438DV-T1-E3
SI3438DV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 7.4A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.5W (Tc)
Rds On (Max) @ Id, Vgs: 35.5mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
si3438dv.pdf
auf Bestellung 31 Stücke
Lieferzeit 21-28 Tag (e)
SI3438DV-T1-E3
SI3438DV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 7.4A 6TSOP
Rds On (Max) @ Id, Vgs: 35.5mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.5W (Tc)
si3438dv.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI3438DV-T1-E3
SI3438DV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 7.4A 6-TSOP
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
FET Type: MOSFET N-Channel, Metal Oxide
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.5W
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 35.5mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Drain to Source Voltage (Vdss): 40V
si3438dv.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen