SI3438DV-T1-E3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 7.4A 6TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.5W (Tc)
Rds On (Max) @ Id, Vgs: 35.5mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Produktrezensionen
Produktbewertung abgeben
Technische Details SI3438DV-T1-E3 Vishay Siliconix
Description: MOSFET N-CH 40V 7.4A 6TSOP, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 6-TSOP, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 2W (Ta), 3.5W (Tc), Rds On (Max) @ Id, Vgs: 35.5mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V.
Weitere Produktangebote SI3438DV-T1-E3 nach Preis ab 0.83 EUR bis 3.22 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SI3438DV-T1-E3 | Vishay / Siliconix |
MOSFETs 40V Vds 20V Vgs TSOP-6 |
auf Bestellung 2346 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
SI3438DV-T1-E3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 7.4A 6TSOPInput Capacitance (Ciss) (Max) @ Vds: 640 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 6-TSOP Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2W (Ta), 3.5W (Tc) Rds On (Max) @ Id, Vgs: 35.5mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) |
auf Bestellung 5528 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
| SI3438DV-T1-E3 | VISHAY |
SOT26 |
auf Bestellung 39990 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SI3438DV-T1-E3 |
![]() |
Hersteller: Vishay / Siliconix
MOSFETs 40V Vds 20V Vgs TSOP-6
MOSFETs 40V Vds 20V Vgs TSOP-6
auf Bestellung 2346 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 3.17 EUR |
| 10+ | 2.01 EUR |
| 100+ | 1.34 EUR |
| 500+ | 1.06 EUR |
| 1000+ | 0.96 EUR |
| 3000+ | 0.84 EUR |
| 6000+ | 0.83 EUR |
| SI3438DV-T1-E3 |
![]() |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 7.4A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.5W (Tc)
Rds On (Max) @ Id, Vgs: 35.5mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 7.4A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.5W (Tc)
Rds On (Max) @ Id, Vgs: 35.5mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 5528 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.22 EUR |
| 11+ | 2.03 EUR |
| 50+ | 1.52 EUR |
| 100+ | 1.37 EUR |
| 500+ | 1.07 EUR |
| SI3438DV-T1-E3 |
![]() |
Hersteller: VISHAY
SOT26
SOT26
auf Bestellung 39990 Stücke:
Lieferzeit 21-28 Tag (e)


