SI3438DV-T1-E3 Vishay Siliconix

Description: MOSFET N-CH 40V 7.4A 6TSOP, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 6-TSOP, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 2W (Ta), 3.5W (Tc), Rds On (Max) @ Id, Vgs: 35.5mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V.