SI3438DV-T1-E3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 40V 7.4A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 35.5mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Ta), 3.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 20 V
auf Bestellung 2795 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 11+ | 1.72 EUR |
| 13+ | 1.37 EUR |
| 100+ | 0.99 EUR |
| 500+ | 0.85 EUR |
| 1000+ | 0.76 EUR |
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Technische Details SI3438DV-T1-E3 Vishay Siliconix
Description: MOSFET N-CH 40V 7.4A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc), Rds On (Max) @ Id, Vgs: 35.5mOhm @ 5A, 10V, Power Dissipation (Max): 2W (Ta), 3.5W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 6-TSOP, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 20 V.
Weitere Produktangebote SI3438DV-T1-E3 nach Preis ab 0.68 EUR bis 1.75 EUR
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SI3438DV-T1-E3 | Hersteller : Vishay / Siliconix |
MOSFETs 40V Vds 20V Vgs TSOP-6 |
auf Bestellung 2801 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI3438DV-T1-E3 | Hersteller : VISHAY |
SOT26 |
auf Bestellung 39990 Stücke: Lieferzeit 21-28 Tag (e) |
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| SI3438DV-T1-E3 | Hersteller : VISHAY |
SOT26/SOT363 |
auf Bestellung 39000 Stücke: Lieferzeit 21-28 Tag (e) |
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| SI3438DV-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 7.4A; Idm: 20A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 7.4A Pulsed drain current: 20A Power dissipation: 3.5W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 42.5mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI3438DV-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 40V 7.4A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc) Rds On (Max) @ Id, Vgs: 35.5mOhm @ 5A, 10V Power Dissipation (Max): 2W (Ta), 3.5W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 20 V |
Produkt ist nicht verfügbar |
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| SI3438DV-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 7.4A; Idm: 20A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 7.4A Pulsed drain current: 20A Power dissipation: 3.5W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 42.5mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |