auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.42 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI3440DV-T1-GE3 Vishay
Description: MOSFET N-CH 150V 1.2A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), Rds On (Max) @ Id, Vgs: 375mOhm @ 1.5A, 10V, Power Dissipation (Max): 1.14W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 6-TSOP, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V.
Weitere Produktangebote SI3440DV-T1-GE3 nach Preis ab 0.54 EUR bis 3.89 EUR
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SI3440DV-T1-GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 150V 1.2A 6-Pin TSOP T/R |
auf Bestellung 33000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI3440DV-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 150V 1.2A 6-Pin TSOP T/R |
auf Bestellung 33000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI3440DV-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 150V 1.2A 6-Pin TSOP T/R |
auf Bestellung 1163 Stücke: Lieferzeit 14-21 Tag (e) |
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SI3440DV-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 150V 1.2A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) Rds On (Max) @ Id, Vgs: 375mOhm @ 1.5A, 10V Power Dissipation (Max): 1.14W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V |
auf Bestellung 21000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI3440DV-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET 150V Vds 20V Vgs TSOP-6 |
auf Bestellung 15393 Stücke: Lieferzeit 14-28 Tag (e) |
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SI3440DV-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 150V 1.2A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) Rds On (Max) @ Id, Vgs: 375mOhm @ 1.5A, 10V Power Dissipation (Max): 1.14W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V |
auf Bestellung 32453 Stücke: Lieferzeit 21-28 Tag (e) |
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SI3440DV-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 150V 1.2A 6-Pin TSOP T/R |
auf Bestellung 33000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI3440DV-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 150V 1.2A 6-Pin TSOP T/R SI3440DV-T1-GE3 TSI3440dv Anzahl je Verpackung: 10 Stücke |
auf Bestellung 7 Stücke: Lieferzeit 7-14 Tag (e) |
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SI3440DV-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 150V 1.2A 6-Pin TSOP T/R |
Produkt ist nicht verfügbar |
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SI3440DV-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 1.2A; Idm: 6A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 1.2A Pulsed drain current: 6A Power dissipation: 0.59W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 0.375Ω Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SI3440DV-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 1.2A; Idm: 6A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 1.2A Pulsed drain current: 6A Power dissipation: 0.59W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 0.375Ω Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |