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Technische Details SI3440DV-T1-GE3 Vishay
Description: MOSFET N-CH 150V 1.2A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), Rds On (Max) @ Id, Vgs: 375mOhm @ 1.5A, 10V, Power Dissipation (Max): 1.14W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 6-TSOP, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V.
Weitere Produktangebote SI3440DV-T1-GE3 nach Preis ab 0.52 EUR bis 4.13 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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SI3440DV-T1-GE3 | Vishay |
 Trans MOSFET N-CH 150V 1.2A 6-Pin TSOP T/R |
auf Bestellung 33000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI3440DV-T1-GE3 | Vishay |
Trans MOSFET N-CH 150V 1.2A 6-Pin TSOP T/R |
auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI3440DV-T1-GE3 | Vishay |
Trans MOSFET N-CH 150V 1.2A 6-Pin TSOP T/R |
auf Bestellung 236416 Stücke: Lieferzeit 14-21 Tag (e) |
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SI3440DV-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 150V 1.2A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) Rds On (Max) @ Id, Vgs: 375mOhm @ 1.5A, 10V Power Dissipation (Max): 1.14W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V |
auf Bestellung 21000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3440DV-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 1.2A; Idm: 6A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 1.2A Pulsed drain current: 6A Power dissipation: 1.14W Case: SC74; TSOP6 Gate-source voltage: ±20V On-state resistance: 0.4Ω Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® |
auf Bestellung 1843 Stücke: Lieferzeit 14-21 Tag (e) |
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SI3440DV-T1-GE3 | Vishay |
Trans MOSFET N-CH 150V 1.2A 6-Pin TSOP T/R |
auf Bestellung 236440 Stücke: Lieferzeit 14-21 Tag (e) |
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SI3440DV-T1-GE3 | Vishay |
Trans MOSFET N-CH 150V 1.2A 6-Pin TSOP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI3440DV-T1-GE3 | Vishay |
Trans MOSFET N-CH 150V 1.2A 6-Pin TSOP T/R |
auf Bestellung 193635 Stücke: Lieferzeit 14-21 Tag (e) |
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SI3440DV-T1-GE3 | Vishay Semiconductors |
MOSFET 150V Vds 20V Vgs TSOP-6 |
auf Bestellung 14946 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3440DV-T1-GE3 | Vishay |
Trans MOSFET N-CH 150V 1.2A 6-Pin TSOP T/R |
auf Bestellung 1161 Stücke: Lieferzeit 14-21 Tag (e) |
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SI3440DV-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 150V 1.2A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) Rds On (Max) @ Id, Vgs: 375mOhm @ 1.5A, 10V Power Dissipation (Max): 1.14W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V |
auf Bestellung 24103 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI3440DV-T1-GE3 |
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Hersteller: Vishay
Trans MOSFET N-CH 150V 1.2A 6-Pin TSOP T/R
Trans MOSFET N-CH 150V 1.2A 6-Pin TSOP T/R
auf Bestellung 33000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.6 EUR |
| SI3440DV-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 150V 1.2A 6-Pin TSOP T/R
Trans MOSFET N-CH 150V 1.2A 6-Pin TSOP T/R
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.99 EUR |
| SI3440DV-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 150V 1.2A 6-Pin TSOP T/R
Trans MOSFET N-CH 150V 1.2A 6-Pin TSOP T/R
auf Bestellung 236416 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 157+ | 1.12 EUR |
| SI3440DV-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 1.2A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 375mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.14W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Description: MOSFET N-CH 150V 1.2A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 375mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.14W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1.15 EUR |
| 6000+ | 1.09 EUR |
| SI3440DV-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 1.2A; Idm: 6A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1.2A
Pulsed drain current: 6A
Power dissipation: 1.14W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 1.2A; Idm: 6A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1.2A
Pulsed drain current: 6A
Power dissipation: 1.14W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
auf Bestellung 1843 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 72+ | 1.19 EUR |
| 103+ | 0.83 EUR |
| 128+ | 0.67 EUR |
| 500+ | 0.6 EUR |
| 1000+ | 0.57 EUR |
| SI3440DV-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 150V 1.2A 6-Pin TSOP T/R
Trans MOSFET N-CH 150V 1.2A 6-Pin TSOP T/R
auf Bestellung 236440 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 133+ | 1.33 EUR |
| 156+ | 1.08 EUR |
| 190+ | 0.86 EUR |
| 500+ | 0.73 EUR |
| 1000+ | 0.65 EUR |
| 3000+ | 0.6 EUR |
| 6000+ | 0.52 EUR |
| SI3440DV-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 150V 1.2A 6-Pin TSOP T/R
Trans MOSFET N-CH 150V 1.2A 6-Pin TSOP T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1.5 EUR |
| SI3440DV-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 150V 1.2A 6-Pin TSOP T/R
Trans MOSFET N-CH 150V 1.2A 6-Pin TSOP T/R
auf Bestellung 193635 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 86+ | 2.05 EUR |
| 118+ | 1.48 EUR |
| 500+ | 1.15 EUR |
| 1000+ | 1.01 EUR |
| 3000+ | 0.93 EUR |
| 6000+ | 0.82 EUR |
| SI3440DV-T1-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFET 150V Vds 20V Vgs TSOP-6
MOSFET 150V Vds 20V Vgs TSOP-6
auf Bestellung 14946 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.84 EUR |
| 10+ | 2.34 EUR |
| 100+ | 1.8 EUR |
| 500+ | 1.55 EUR |
| 1000+ | 1.26 EUR |
| 3000+ | 1.12 EUR |
| SI3440DV-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 150V 1.2A 6-Pin TSOP T/R
Trans MOSFET N-CH 150V 1.2A 6-Pin TSOP T/R
auf Bestellung 1161 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 56+ | 3.34 EUR |
| 100+ | 2.09 EUR |
| 200+ | 1.9 EUR |
| 500+ | 1.37 EUR |
| SI3440DV-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 1.2A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 375mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.14W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Description: MOSFET N-CH 150V 1.2A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 375mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.14W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
auf Bestellung 24103 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 4.13 EUR |
| 10+ | 2.64 EUR |
| 100+ | 1.78 EUR |
| 500+ | 1.42 EUR |
| 1000+ | 1.3 EUR |