SI3442BDV-T1-E3

SI3442BDV-T1-E3

SI3442BDV-T1-E3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 3A 6TSOP
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel

si3442bd.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
3000+ 0.63 EUR

Technische Details SI3442BDV-T1-E3

Description: MOSFET N-CH 20V 3A 6TSOP, Technology: MOSFET (Metal Oxide), Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Part Status: Active, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR), Supplier Device Package: 6-TSOP, Vgs(th) (Max) @ Id: 1.8V @ 250µA, Power Dissipation (Max): 860mW (Ta), Rds On (Max) @ Id, Vgs: 57mOhm @ 4A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), FET Type: N-Channel.

Preis SI3442BDV-T1-E3 ab 0.63 EUR bis 1.59 EUR

SI3442BDV-T1-E3
SI3442BDV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 3A 6TSOP
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 10 V
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
si3442bd.pdf
auf Bestellung 8619 Stücke
Lieferzeit 21-28 Tag (e)
17+ 1.59 EUR
19+ 1.39 EUR
100+ 1.06 EUR
500+ 0.84 EUR
1000+ 0.67 EUR
SI3442BDV-T1-E3
Hersteller: VISHAY
SOT163
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SI3442BDV-T1-E3
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SI3442BDV-T1-E3
Hersteller: VISHAY
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SI3442BDV-T1-E3
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SI3442BDV-T1-E3
Hersteller: Vishay
Trans MOSFET N-CH 20V 3A 6-Pin TSOP T/R
si3442bd.pdf
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Lieferzeit 14-21 Tag (e)
SI3442BDV-T1-E3
SI3442BDV-T1-E3
Hersteller: Vishay Semiconductors
MOSFET 20V 3A
VISHS85019_1-2566521.pdf
auf Bestellung 5073 Stücke
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SI3442BDV-T1-E3
Hersteller: Vishay
Trans MOSFET N-CH 20V 3A 6-Pin TSOP T/R
si3442bd.pdf
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