
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
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3000+ | 0.27 EUR |
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Technische Details SI3442BDV-T1-E3 Vishay
Description: MOSFET N-CH 20V 3A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 57mOhm @ 4A, 4.5V, Power Dissipation (Max): 860mW (Ta), Vgs(th) (Max) @ Id: 1.8V @ 250µA, Supplier Device Package: 6-TSOP, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 10 V.
Weitere Produktangebote SI3442BDV-T1-E3 nach Preis ab 0.31 EUR bis 1.55 EUR
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SI3442BDV-T1-E3 | Hersteller : Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 57mOhm @ 4A, 4.5V Power Dissipation (Max): 860mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 10 V |
auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3442BDV-T1-E3 | Hersteller : Vishay |
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auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI3442BDV-T1-E3 | Hersteller : Vishay Semiconductors |
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auf Bestellung 67926 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3442BDV-T1-E3 | Hersteller : Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 57mOhm @ 4A, 4.5V Power Dissipation (Max): 860mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 10 V |
auf Bestellung 24567 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3442BDV-T1-E3 | Hersteller : VISHAY |
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auf Bestellung 9200 Stücke: Lieferzeit 21-28 Tag (e) |
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SI3442BDV-T1-E3 | Hersteller : VISHAY |
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auf Bestellung 3018 Stücke: Lieferzeit 21-28 Tag (e) |
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SI3442BDV-T1-E3 | Hersteller : VISHAY |
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auf Bestellung 18610 Stücke: Lieferzeit 21-28 Tag (e) |
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SI3442BDV-T1-E3 | Hersteller : Vishay |
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Produkt ist nicht verfügbar |
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SI3442BDV-T1-E3 | Hersteller : Vishay |
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Produkt ist nicht verfügbar |
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SI3442BDV-T1-E3 | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 4.2A; Idm: 20A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.2A Pulsed drain current: 20A Power dissipation: 1.67W Case: TSOP6 Gate-source voltage: ±12V On-state resistance: 90mΩ Mounting: SMD Gate charge: 5nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI3442BDV-T1-E3 | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 4.2A; Idm: 20A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.2A Pulsed drain current: 20A Power dissipation: 1.67W Case: TSOP6 Gate-source voltage: ±12V On-state resistance: 90mΩ Mounting: SMD Gate charge: 5nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |