auf Bestellung 972 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 450+ | 0.35 EUR |
| 452+ | 0.34 EUR |
| 507+ | 0.29 EUR |
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Technische Details SI3443BDV-T1-E3 Vishay
Description: MOSFET P-CH 20V 3.6A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 4.5V, Power Dissipation (Max): 1.1W (Ta), Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: 6-TSOP, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V.
Weitere Produktangebote SI3443BDV-T1-E3 nach Preis ab 0.24 EUR bis 1.55 EUR
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SI3443BDV-T1-E3 | Hersteller : VISHAY |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -3.8A; 1.3W; TSOP6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.8A Power dissipation: 1.3W Case: TSOP6 Gate-source voltage: ±12V On-state resistance: 60mΩ Mounting: SMD Gate charge: 6nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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SI3443BDV-T1-E3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; 1.3W; TSOP6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.8A Power dissipation: 1.3W Case: TSOP6 Gate-source voltage: ±12V On-state resistance: 60mΩ Mounting: SMD Gate charge: 6nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI3443BDV-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 3.6A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 4.5V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI3443BDV-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 3.6A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 4.5V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V |
auf Bestellung 6318 Stücke: Lieferzeit 21-28 Tag (e) |
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SI3443BDV-T1-E3 | Hersteller : Vishay Semiconductors |
MOSFET 20V 4.4A 2W |
auf Bestellung 159056 Stücke: Lieferzeit 14-28 Tag (e) |
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SI3443BDV-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 20V 3.6A 6-Pin TSOP T/R |
Produkt ist nicht verfügbar |
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SI3443BDV-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 20V 3.6A 6-Pin TSOP T/R |
Produkt ist nicht verfügbar |