SI3443BDV-T1-E3 VISHAY
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -3.6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.6A
Pulsed drain current: -20A
Power dissipation: 1.1W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
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Technische Details SI3443BDV-T1-E3 VISHAY
Description: MOSFET P-CH 20V 3.6A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 4.5V, Power Dissipation (Max): 1.1W (Ta), Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: 6-TSOP, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V.
Weitere Produktangebote SI3443BDV-T1-E3 nach Preis ab 0.37 EUR bis 1.36 EUR
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SI3443BDV-T1-E3 | Vishay Semiconductors |
 MOSFETs 20V 4.4A 2W |
auf Bestellung 148889 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI3443BDV-T1-E3 | |
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Hersteller: Vishay Semiconductors
MOSFETs 20V 4.4A 2W
MOSFETs 20V 4.4A 2W
auf Bestellung 148889 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 1.36 EUR |
| 10+ | 0.95 EUR |
| 100+ | 0.65 EUR |
| 500+ | 0.54 EUR |
| 1000+ | 0.46 EUR |
| 3000+ | 0.37 EUR |