SI3460DDV-T1-GE3
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 102000 Stücke
Lieferzeit 14-21 Tag (e)
auf Bestellung 102000 Stücke
Lieferzeit 14-21 Tag (e)
Technische Details SI3460DDV-T1-GE3
Description: MOSFET N-CH 20V 7.9A 6-TSOP, Vgs (Max): ±8V, Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V, Vgs(th) (Max) @ Id: 1V @ 250µA, Rds On (Max) @ Id, Vgs: 28mOhm @ 5.1A, 4.5V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Current - Continuous Drain (Id) @ 25°C: 7.9A (Tc), Drain to Source Voltage (Vdss): 20V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Base Part Number: SI3460, Package / Case: SOT-23-6 Thin, TSOT-23-6, Supplier Device Package: 6-TSOP, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 666pF @ 10V.
Preis SI3460DDV-T1-GE3 ab 0.14 EUR bis 0.2 EUR
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SI3460DDV-T1-GE3 Hersteller: VISHAY Material: SI3460DDV-T1-GE3 SMD N channel transistors 
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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SI3460DDV-T1-GE3 Hersteller: VISHAY Material: SI3460DDV-T1-GE3 SMD N channel transistors
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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 Hersteller: Vishay / Siliconix MOSFET 20V Vds 8V Vgs TSOP-6
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auf Bestellung 7624 Stücke Lieferzeit 14-28 Tag (e) |
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SI3460DDV-T1-GE3 Hersteller: Vishay Trans MOSFET N-CH 20V 7.9A 6-Pin TSOP T/R
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auf Bestellung 81 Stücke Lieferzeit 14-21 Tag (e) |
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 Hersteller: Vishay Siliconix Description: MOSFET N-CH 20V 7.9A 6TSOP Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 666pF @ 10V Vgs (Max): ±8V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 28mOhm @ 5.1A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Current - Continuous Drain (Id) @ 25°C: 7.9A (Tc) Drain to Source Voltage (Vdss): 20V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) Base Part Number: SI3460 Manufacturer: Vishay Siliconix Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ)
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auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e) |
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 Hersteller: Vishay Siliconix Description: MOSFET N-CH 20V 7.9A 6-TSOP Vgs (Max): ±8V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 28mOhm @ 5.1A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Current - Continuous Drain (Id) @ 25°C: 7.9A (Tc) Drain to Source Voltage (Vdss): 20V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Base Part Number: SI3460 Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 666pF @ 10V
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auf Bestellung 668 Stücke Lieferzeit 21-28 Tag (e) |
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Hersteller: Vishay Siliconix Description: MOSFET N-CH 20V 7.9A 6TSOP Base Part Number: SI3460 Manufacturer: Vishay Siliconix Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc) Vgs (Max): ±8V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 28mOhm @ 5.1A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Current - Continuous Drain (Id) @ 25°C: 7.9A (Tc) Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V FET Type: N-Channel Part Status: Active Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 666pF @ 10V
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auf Bestellung 5516 Stücke Lieferzeit 21-28 Tag (e) |
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