SI3460DDV-T1-GE3

SI3460DDV-T1-GE3

Hersteller: Vishay
Trans MOSFET N-CH 20V 7.9A 6-Pin TSOP T/R
si3460dd.pdf si3460dd.pdf
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auf Bestellung 102000 Stücke
Lieferzeit 14-21 Tag (e)
3000+ 0.2 EUR
9000+ 0.16 EUR
24000+ 0.15 EUR
45000+ 0.14 EUR

Technische Details SI3460DDV-T1-GE3

Description: MOSFET N-CH 20V 7.9A 6-TSOP, Vgs (Max): ±8V, Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V, Vgs(th) (Max) @ Id: 1V @ 250µA, Rds On (Max) @ Id, Vgs: 28mOhm @ 5.1A, 4.5V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Current - Continuous Drain (Id) @ 25°C: 7.9A (Tc), Drain to Source Voltage (Vdss): 20V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Base Part Number: SI3460, Package / Case: SOT-23-6 Thin, TSOT-23-6, Supplier Device Package: 6-TSOP, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 666pF @ 10V.

Preis SI3460DDV-T1-GE3 ab 0.14 EUR bis 0.2 EUR

SI3460DDV-T1-GE3
Hersteller: VISHAY
Material: SI3460DDV-T1-GE3 SMD N channel transistors
si3460dd.pdf si3460dd.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI3460DDV-T1-GE3
Hersteller: VISHAY
Material: SI3460DDV-T1-GE3 SMD N channel transistors
si3460dd.pdf si3460dd.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI3460DDV-T1-GE3
SI3460DDV-T1-GE3
Hersteller: Vishay / Siliconix
MOSFET 20V Vds 8V Vgs TSOP-6
SI3460DD-244522.pdf
auf Bestellung 7624 Stücke
Lieferzeit 14-28 Tag (e)
SI3460DDV-T1-GE3
Hersteller: Vishay
Trans MOSFET N-CH 20V 7.9A 6-Pin TSOP T/R
si3460dd.pdf si3460dd.pdf
auf Bestellung 81 Stücke
Lieferzeit 14-21 Tag (e)
SI3460DDV-T1-GE3
SI3460DDV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 7.9A 6TSOP
Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 666pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 28mOhm @ 5.1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.9A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SI3460
Manufacturer: Vishay Siliconix
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
si3460dd.pdf
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
SI3460DDV-T1-GE3
SI3460DDV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 7.9A 6-TSOP
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 28mOhm @ 5.1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.9A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI3460
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 666pF @ 10V
si3460dd.pdf
auf Bestellung 668 Stücke
Lieferzeit 21-28 Tag (e)
SI3460DDV-T1-GE3
SI3460DDV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 7.9A 6TSOP
Base Part Number: SI3460
Manufacturer: Vishay Siliconix
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 28mOhm @ 5.1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.9A (Tc)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 666pF @ 10V
si3460dd.pdf
auf Bestellung 5516 Stücke
Lieferzeit 21-28 Tag (e)