SI3900DV-T1-E3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 2A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2A
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Description: MOSFET 2N-CH 20V 2A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2A
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.44 EUR |
6000+ | 0.42 EUR |
9000+ | 0.39 EUR |
30000+ | 0.38 EUR |
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Technische Details SI3900DV-T1-E3 Vishay Siliconix
Description: MOSFET 2N-CH 20V 2A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 830mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 2A, Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 6-TSOP.
Weitere Produktangebote SI3900DV-T1-E3 nach Preis ab 0.5 EUR bis 1.2 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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SI3900DV-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 20V 2A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 830mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2A Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-TSOP |
auf Bestellung 36286 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3900DV-T1-E3 | Hersteller : Vishay Semiconductors | MOSFET 20V N-CHANNEL (D-S) TRENCH DU |
auf Bestellung 133841 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3900DV-T1-E3 | Hersteller : Vishay / Siliconix | MOSFET TSOP6 20V DUAL N-CH (D-S) TREN |
auf Bestellung 16616 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3900DV-T1-E3 | Hersteller : Vishay | Trans MOSFET N-CH 20V 2A 6-Pin TSOP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI3900DV-T1-E3 | Hersteller : SI | SOT23 |
auf Bestellung 1500 Stücke: Lieferzeit 21-28 Tag (e) |
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SI3900DV-T1-E3 | Hersteller : VISHAY |
auf Bestellung 6765 Stücke: Lieferzeit 21-28 Tag (e) |
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SI3900DV-T1-E3 | Hersteller : VISHAY | 0724+ |
auf Bestellung 5677 Stücke: Lieferzeit 21-28 Tag (e) |
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SI3900DVT1E3 | Hersteller : VISHAY | SMD |
auf Bestellung 2802000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI3900DV-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 2.4A; Idm: 8A Kind of package: reel; tape Drain-source voltage: 20V Drain current: 2.4A On-state resistance: 0.2Ω Type of transistor: N-MOSFET Power dissipation: 1.15W Polarisation: unipolar Gate charge: 4nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 8A Mounting: SMD Case: TSOP6 Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI3900DV-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 2.4A; Idm: 8A Kind of package: reel; tape Drain-source voltage: 20V Drain current: 2.4A On-state resistance: 0.2Ω Type of transistor: N-MOSFET Power dissipation: 1.15W Polarisation: unipolar Gate charge: 4nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 8A Mounting: SMD Case: TSOP6 |
Produkt ist nicht verfügbar |