SI3900DV-T1-E3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 2A 6TSOP
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A
Drain to Source Voltage (Vdss): 20V
Power - Max: 830mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.47 EUR |
| 6000+ | 0.44 EUR |
| 9000+ | 0.42 EUR |
| 15000+ | 0.4 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI3900DV-T1-E3 Vishay Siliconix
Description: MOSFET 2N-CH 20V 2A 6TSOP, Supplier Device Package: 6-TSOP, Vgs(th) (Max) @ Id: 1.5V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V, Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 2A, Drain to Source Voltage (Vdss): 20V, Power - Max: 830mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR).
Weitere Produktangebote SI3900DV-T1-E3 nach Preis ab 0.54 EUR bis 2.09 EUR
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SI3900DV-T1-E3 | Vishay Siliconix |
Description: MOSFET 2N-CH 20V 2A 6TSOP Supplier Device Package: 6-TSOP Vgs(th) (Max) @ Id: 1.5V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2A Drain to Source Voltage (Vdss): 20V Power - Max: 830mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) |
auf Bestellung 34004 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3900DV-T1-E3 | Vishay Semiconductors |
MOSFETs TSOP N CHAN 20V |
auf Bestellung 114732 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3900DV-T1-E3 | Vishay / Siliconix |
MOSFET TSOP6 20V DUAL N-CH (D-S) TREN |
auf Bestellung 16616 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| SI3900DV-T1-E3 | VISHAY |
|
auf Bestellung 6765 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| SI3900DVT1E3 | VISHAY | SMD |
auf Bestellung 2802000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SI3900DV-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 2A 6TSOP
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A
Drain to Source Voltage (Vdss): 20V
Power - Max: 830mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 20V 2A 6TSOP
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A
Drain to Source Voltage (Vdss): 20V
Power - Max: 830mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 34004 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10+ | 1.88 EUR |
| 15+ | 1.17 EUR |
| 100+ | 0.77 EUR |
| 500+ | 0.6 EUR |
| 1000+ | 0.54 EUR |
| SI3900DV-T1-E3 |
|
Hersteller: Vishay Semiconductors
MOSFETs TSOP N CHAN 20V
MOSFETs TSOP N CHAN 20V
auf Bestellung 114732 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.09 EUR |
| 10+ | 1.46 EUR |
| 100+ | 1.14 EUR |
| 500+ | 0.92 EUR |
| 1000+ | 0.78 EUR |
| 3000+ | 0.71 EUR |
| SI3900DV-T1-E3 |
|
Hersteller: Vishay / Siliconix
MOSFET TSOP6 20V DUAL N-CH (D-S) TREN
MOSFET TSOP6 20V DUAL N-CH (D-S) TREN
auf Bestellung 16616 Stücke:
Lieferzeit 10-14 Tag (e)
| SI3900DV-T1-E3 |
|
Hersteller: VISHAY
auf Bestellung 6765 Stücke:
Lieferzeit 21-28 Tag (e)
| SI3900DVT1E3 |
Hersteller: VISHAY
SMD
SMD
auf Bestellung 2802000 Stücke:
Lieferzeit 21-28 Tag (e)