SI3900DV-T1-E3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 2A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2A
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.56 EUR |
| 6000+ | 0.52 EUR |
| 9000+ | 0.5 EUR |
| 15000+ | 0.48 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
3000 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details SI3900DV-T1-E3 Vishay Siliconix
Description: MOSFET 2N-CH 20V 2A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 830mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 2A, Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 6-TSOP.
Weitere Produktangebote SI3900DV-T1-E3 nach Preis ab 0.64 EUR bis 2.49 EUR
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SI3900DV-T1-E3 | Vishay Siliconix |
Description: MOSFET 2N-CH 20V 2A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 830mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2A Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-TSOP |
auf Bestellung 34004 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3900DV-T1-E3 | Vishay Semiconductors |
MOSFETs TSOP N CHAN 20V |
auf Bestellung 114732 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3900DV-T1-E3 | Vishay / Siliconix |
MOSFET TSOP6 20V DUAL N-CH (D-S) TREN |
auf Bestellung 16616 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| SI3900DVT1E3 | VISHAY | SMD |
auf Bestellung 2802000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SI3900DV-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 2A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2A
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Description: MOSFET 2N-CH 20V 2A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2A
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
auf Bestellung 34004 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.24 EUR |
| 15+ | 1.39 EUR |
| 100+ | 0.92 EUR |
| 500+ | 0.71 EUR |
| 1000+ | 0.64 EUR |
| SI3900DV-T1-E3 |
|
Hersteller: Vishay Semiconductors
MOSFETs TSOP N CHAN 20V
MOSFETs TSOP N CHAN 20V
auf Bestellung 114732 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.49 EUR |
| 10+ | 1.74 EUR |
| 100+ | 1.36 EUR |
| 500+ | 1.09 EUR |
| 1000+ | 0.93 EUR |
| 3000+ | 0.84 EUR |
| SI3900DV-T1-E3 |
|
Hersteller: Vishay / Siliconix
MOSFET TSOP6 20V DUAL N-CH (D-S) TREN
MOSFET TSOP6 20V DUAL N-CH (D-S) TREN
auf Bestellung 16616 Stücke:
Lieferzeit 10-14 Tag (e)
| SI3900DVT1E3 |
Hersteller: VISHAY
SMD
SMD
auf Bestellung 2802000 Stücke:
Lieferzeit 21-28 Tag (e)