SI4048DY-T1-GE3

SI4048DY-T1-GE3

SI4048DY-T1-GE3

Hersteller: Vishay / Siliconix
MOSFET N-CHANNEL 30-V (D-S) MOSFET
si4048dy-524792.pdf
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auf Bestellung 2875 Stücke
Lieferzeit 14-28 Tag (e)

Technische Details SI4048DY-T1-GE3

Description: MOSFET N-CH 30V 19.3A 8SOIC, Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 15V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Rds On (Max) @ Id, Vgs: 85mOhm @ 15A, 10V, Drive Voltage (Max Rds On, Min Rds On): 10V, Current - Continuous Drain (Id) @ 25°C: 19.3A (Tc), Drain to Source Voltage (Vdss): 30V, Technology: MOSFET (Metal Oxide), Package / Case: 8-SOIC (0.154", 3.90mm Width), Supplier Device Package: 8-SO, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc), FET Type: N-Channel, Part Status: Obsolete, Packaging: Tape & Reel (TR).

Preis SI4048DY-T1-GE3 ab 0 EUR bis 0 EUR

SI4048DY-T1-GE3
SI4048DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 19.3A 8SOIC
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 85mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 19.3A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 15V
si4048dy.pdf
auf Bestellung 2262 Stücke
Lieferzeit 21-28 Tag (e)
SI4048DY-T1-GE3
SI4048DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 19.3A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 85mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 19.3A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
si4048dy.pdf
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