SI4100DY-T1-E3

SI4100DYT1E3

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Technische Details SI4100DYT1E3

Description: MOSFET N-CH 100V 6.8A 8-SOIC, Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 50V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Rds On (Max) @ Id, Vgs: 63mOhm @ 4.4A, 10V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc), Drain to Source Voltage (Vdss): 100V, Technology: MOSFET (Metal Oxide), Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Part Status: Active, FET Type: N-Channel, Base Part Number: SI4100, Package / Case: 8-SOIC (0.154", 3.90mm Width), Supplier Device Package: 8-SO, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 2.5W (Ta), 6W (Tc).

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SI4100DYT1E3
Hersteller: VISHAY

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SI4100DY-T1-E3
Hersteller:

si4100dy.pdf si4100dy.pdf
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SI4100DY-T1-E3
SI4100DY-T1-E3
Hersteller: Vishay Semiconductors
MOSFET 100V Vds 20V Vgs SO-8
si4100dy-1765089.pdf
auf Bestellung 16317 Stücke
Lieferzeit 14-28 Tag (e)
SI4100DY-T1-E3
SI4100DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 6.8A 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 63mOhm @ 4.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: N-Channel
Base Part Number: SI4100
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 6W (Tc)
si4100dy.pdf
auf Bestellung 7081 Stücke
Lieferzeit 21-28 Tag (e)
SI4100DY-T1-E3
SI4100DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 6.8A 8SO
Manufacturer: Vishay Siliconix
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 50V
Vgs (Max): ±20V
Part Status: Active
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Packaging: Tape & Reel (TR)
Rds On (Max) @ Id, Vgs: 63mOhm @ 4.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Base Part Number: SI4100
si4100dy.pdf
auf Bestellung 10000 Stücke
Lieferzeit 21-28 Tag (e)
SI4100DY-T1-E3
SI4100DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 6.8A 8SO
Base Part Number: SI4100
Manufacturer: Vishay Siliconix
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 63mOhm @ 4.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
si4100dy.pdf
auf Bestellung 10727 Stücke
Lieferzeit 21-28 Tag (e)