SI4100DY-T1-E3
SI4100DYT1E3
Hersteller:
Informationen zu Lagerverfügbarkeit und Lieferzeiten
30000 Stücke
30000 Stücke
Technische Details SI4100DYT1E3
Description: MOSFET N-CH 100V 6.8A 8-SOIC, Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 50V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Rds On (Max) @ Id, Vgs: 63mOhm @ 4.4A, 10V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc), Drain to Source Voltage (Vdss): 100V, Technology: MOSFET (Metal Oxide), Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Part Status: Active, FET Type: N-Channel, Base Part Number: SI4100, Package / Case: 8-SOIC (0.154", 3.90mm Width), Supplier Device Package: 8-SO, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 2.5W (Ta), 6W (Tc).
Preis SI4100DYT1E3 ab 0 EUR bis 0 EUR
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SI4100DYT1E3 Hersteller: VISHAY |
30000 Stücke |
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SI4100DY-T1-E3 Hersteller: 
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 Hersteller: Vishay Semiconductors MOSFET 100V Vds 20V Vgs SO-8
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auf Bestellung 16317 Stücke  Lieferzeit 14-28 Tag (e) |
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 Hersteller: Vishay Siliconix Description: MOSFET N-CH 100V 6.8A 8-SOIC Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 50V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Rds On (Max) @ Id, Vgs: 63mOhm @ 4.4A, 10V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc) Drain to Source Voltage (Vdss): 100V Technology: MOSFET (Metal Oxide) Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Part Status: Active FET Type: N-Channel Base Part Number: SI4100 Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 2.5W (Ta), 6W (Tc)
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auf Bestellung 7081 Stücke Lieferzeit 21-28 Tag (e) |
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 Hersteller: Vishay Siliconix Description: MOSFET N-CH 100V 6.8A 8SO Manufacturer: Vishay Siliconix Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 2.5W (Ta), 6W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 50V Vgs (Max): ±20V Part Status: Active Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Packaging: Tape & Reel (TR) Rds On (Max) @ Id, Vgs: 63mOhm @ 4.4A, 10V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc) Drain to Source Voltage (Vdss): 100V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Base Part Number: SI4100
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auf Bestellung 10000 Stücke Lieferzeit 21-28 Tag (e) |
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Hersteller: Vishay Siliconix Description: MOSFET N-CH 100V 6.8A 8SO Base Part Number: SI4100 Manufacturer: Vishay Siliconix Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 2.5W (Ta), 6W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 50V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc) Drain to Source Voltage (Vdss): 100V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Cut Tape (CT) Vgs(th) (Max) @ Id: 4.5V @ 250µA Rds On (Max) @ Id, Vgs: 63mOhm @ 4.4A, 10V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
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auf Bestellung 10727 Stücke Lieferzeit 21-28 Tag (e) |
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