SI4100DY-T1-E3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 6.8A 8SO
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 6W (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
| Anzahl | Preis |
|---|---|
| 2500+ | 0.87 EUR |
| 5000+ | 0.81 EUR |
| 7500+ | 0.8 EUR |
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Technische Details SI4100DY-T1-E3 Vishay Siliconix
Description: MOSFET N-CH 100V 6.8A 8SO, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 2.5W (Ta), 6W (Tc), Rds On (Max) @ Id, Vgs: 63mOhm @ 4.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V.
Weitere Produktangebote SI4100DY-T1-E3 nach Preis ab 0.97 EUR bis 3.12 EUR
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SI4100DY-T1-E3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 6.8A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc) Rds On (Max) @ Id, Vgs: 63mOhm @ 4.4A, 10V Power Dissipation (Max): 2.5W (Ta), 6W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 50 V |
auf Bestellung 28185 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4100DY-T1-E3 | Vishay Semiconductors |
MOSFET 100V Vds 20V Vgs SO-8 |
auf Bestellung 16317 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| SI4100DY-T1-E3 |
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auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| SI4100DYT1E3 | VISHAY |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SI4100DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 6.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 4.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 6W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 50 V
Description: MOSFET N-CH 100V 6.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 4.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 6W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 50 V
auf Bestellung 28185 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.12 EUR |
| 10+ | 1.99 EUR |
| 100+ | 1.34 EUR |
| 500+ | 1.06 EUR |
| 1000+ | 0.97 EUR |
| SI4100DY-T1-E3 |
|
Hersteller: Vishay Semiconductors
MOSFET 100V Vds 20V Vgs SO-8
MOSFET 100V Vds 20V Vgs SO-8
auf Bestellung 16317 Stücke:
Lieferzeit 10-14 Tag (e)
| SI4100DY-T1-E3 |
|
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
| SI4100DYT1E3 |
Hersteller: VISHAY
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)