SI4100DY-T1-GE3
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 3965 Stücke
Lieferzeit 14-28 Tag (e)
auf Bestellung 3965 Stücke
Lieferzeit 14-28 Tag (e)
Technische Details SI4100DY-T1-GE3
Description: MOSFET N-CH 100V 6.8A 8SO, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 2.5W (Ta), 6W (Tc), Rds On (Max) @ Id, Vgs: 63mOhm @ 4.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Preis SI4100DY-T1-GE3 ab 0 EUR bis 0 EUR
 Hersteller: Vishay Siliconix Description: MOSFET N-CH 100V 6.8A 8SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Rds On (Max) @ Id, Vgs: 63mOhm @ 4.4A, 10V Power Dissipation (Max): 2.5W (Ta), 6W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 50 V Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount 
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auf Bestellung 2 Stücke Lieferzeit 21-28 Tag (e) |
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Hersteller: Vishay Siliconix Description: MOSFET N-CH 100V 6.8A 8SO Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 2.5W (Ta), 6W (Tc) Rds On (Max) @ Id, Vgs: 63mOhm @ 4.4A, 10V Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR)
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