SI4100DY-T1-GE3

SI4100DY-T1-GE3

SI4100DY-T1-GE3

Hersteller: Vishay Semiconductors
MOSFET 100V Vds 20V Vgs SO-8
si4100dy-1765089.pdf
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auf Bestellung 3965 Stücke
Lieferzeit 14-28 Tag (e)

Technische Details SI4100DY-T1-GE3

Description: MOSFET N-CH 100V 6.8A 8SO, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 2.5W (Ta), 6W (Tc), Rds On (Max) @ Id, Vgs: 63mOhm @ 4.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).

Preis SI4100DY-T1-GE3 ab 0 EUR bis 0 EUR

SI4100DY-T1-GE3
SI4100DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 6.8A 8SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Rds On (Max) @ Id, Vgs: 63mOhm @ 4.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 6W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 50 V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
si4100dy.pdf
auf Bestellung 2 Stücke
Lieferzeit 21-28 Tag (e)
SI4100DY-T1-GE3
SI4100DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 6.8A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 6W (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
si4100dy.pdf
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