SI4101DY-T1-GE3

SI4101DY-T1-GE3

SI4101DY-T1-GE3

Hersteller: Vishay Semiconductors
MOSFET -30V Vds 20V Vgs SO-8
si4101dy-1764390.pdf
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auf Bestellung 2688 Stücke
Lieferzeit 14-28 Tag (e)

Technische Details SI4101DY-T1-GE3

Description: MOSFET P-CH 30V 25.7A 8SO, Manufacturer: Vishay Siliconix, Packaging: Tape & Reel (TR), Part Status: Active, FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 25.7A (Tc), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 203nC @ 10V, Vgs (Max): ±20V, Input Capacitance (Ciss) (Max) @ Vds: 8190pF @ 15V, Power Dissipation (Max): 6W (Tc), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Supplier Device Package: 8-SOIC, Package / Case: 8-SOIC (0.154", 3.90mm Width), Base Part Number: SI4101.

Preis SI4101DY-T1-GE3 ab 0 EUR bis 0 EUR

SI4101DY-T1-GE3
Hersteller: Vishay
Trans MOSFET P-CH 30V 25.7A 8-Pin SOIC N T/R
si4101dy.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4101DY-T1-GE3
Hersteller: Vishay
Trans MOSFET P-CH 30V 25.7A 8-Pin SOIC N T/R
si4101dy.pdf
auf Bestellung 6 Stücke
Lieferzeit 14-21 Tag (e)
SI4101DY-T1-GE3
SI4101DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 25.7A 8SO
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 25.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 203nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 8190pF @ 15V
Power Dissipation (Max): 6W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4101
si4101dy.pdf
auf Bestellung 200 Stücke
Lieferzeit 21-28 Tag (e)
SI4101DY-T1-GE3
SI4101DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 25.7A 8SO
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 25.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 203nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 8190pF @ 15V
Power Dissipation (Max): 6W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4101
si4101dy.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen