auf Bestellung 9522 Stücke:
Lieferzeit 312-326 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10+ | 5.72 EUR |
| 11+ | 4.76 EUR |
| 100+ | 3.8 EUR |
| 250+ | 3.51 EUR |
| 500+ | 3.17 EUR |
| 1000+ | 2.73 EUR |
| 2500+ | 2.7 EUR |
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Technische Details SI4122DY-T1-GE3 Vishay Semiconductors
Description: MOSFET N-CH 40V 27.2A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 27.2A (Tc), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V, Power Dissipation (Max): 3W (Ta), 6W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 20 V.
Weitere Produktangebote SI4122DY-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| SI4122DY-T1-GE3 | Hersteller : Vishay |
 10+ |
auf Bestellung 50 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4122DY-T1-GE3 Produktcode: 188744 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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SI4122DY-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 40V 19.2A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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SI4122DY-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 40V 19.2A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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| SI4122DY-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 27.2A; Idm: 70A; 6W Case: SO8 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 40V Drain current: 27.2A On-state resistance: 6mΩ Type of transistor: N-MOSFET Power dissipation: 6W Polarisation: unipolar Gate charge: 95nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: 70A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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SI4122DY-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 40V 27.2A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27.2A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V Power Dissipation (Max): 3W (Ta), 6W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 20 V |
Produkt ist nicht verfügbar |
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SI4122DY-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 40V 27.2A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27.2A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V Power Dissipation (Max): 3W (Ta), 6W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 20 V |
Produkt ist nicht verfügbar |
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| SI4122DY-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 27.2A; Idm: 70A; 6W Case: SO8 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 40V Drain current: 27.2A On-state resistance: 6mΩ Type of transistor: N-MOSFET Power dissipation: 6W Polarisation: unipolar Gate charge: 95nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: 70A |
Produkt ist nicht verfügbar |