SI4143DY-T1-GE3

SI4143DY-T1-GE3

SI4143DY-T1-GE3

Hersteller: Vishay Semiconductors
MOSFET -30V Vds 25V Vgs SO-8
VISH_S_A0002473689_1-2568352.pdf
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auf Bestellung 28824 Stücke
Lieferzeit 14-28 Tag (e)

Technische Details SI4143DY-T1-GE3

Description: MOSFET P-CHANNEL 30V 25.3A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TA), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 25.3A (Tc), Rds On (Max) @ Id, Vgs: 6.2mOhm @ 12A, 10V, Power Dissipation (Max): 6W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6630 pF @ 15 V.

Preis SI4143DY-T1-GE3 ab 0 EUR bis 0 EUR

SI4143DY-T1-GE3
SI4143DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CHANNEL 30V 25.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25.3A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 12A, 10V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6630 pF @ 15 V
si4143dy.pdf
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SI4143DY-T1-GE3
SI4143DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CHANNEL 30V 25.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25.3A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 12A, 10V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6630 pF @ 15 V
si4143dy.pdf
auf Bestellung 1355 Stücke
Lieferzeit 21-28 Tag (e)