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SI4143DY-T1-GE3

SI4143DY-T1-GE3 Vishay Siliconix

si4143dy.pdf
Hersteller: Vishay Siliconix
Description: MOSFET P-CHANNEL 30V 25.3A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 6630 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 6W (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 25.3A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.45 EUR
5000+0.42 EUR
7500+0.4 EUR
12500+0.38 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SI4143DY-T1-GE3 Vishay Siliconix

Description: MOSFET P-CHANNEL 30V 25.3A 8SO, Input Capacitance (Ciss) (Max) @ Vds: 6630 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 6W (Tc), Rds On (Max) @ Id, Vgs: 6.2mOhm @ 12A, 10V, Current - Continuous Drain (Id) @ 25°C: 25.3A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TA), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).

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SI4143DY-T1-GE3 SI4143DY-T1-GE3 Vishay Siliconix si4143dy.pdf Description: MOSFET P-CHANNEL 30V 25.3A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 6630 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 6W (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 25.3A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 12630 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.64 EUR
16+1.1 EUR
100+0.72 EUR
500+0.56 EUR
1000+0.51 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
SI4143DY-T1-GE3 SI4143DY-T1-GE3 Vishay Semiconductors si4143dy.pdf MOSFETs -30V Vds 25V Vgs SO-8
auf Bestellung 108035 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.27 EUR
10+1.43 EUR
100+0.95 EUR
500+0.74 EUR
1000+0.68 EUR
2500+0.6 EUR
5000+0.56 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
SI4143DY-T1-GE3 Vishay Siliconix si4143dy.pdf P-канальний ПТ, Udss, В = 30, Id = 25,3 А, Ciss, пФ @ Uds, В = 6630 @ 15, Qg, нКл = 167 @ 10 В, Rds = 6,2 мОм @ 12 A, 10 В, Ugs(th) = 2,5 В @ 250 мкА, Р, Вт = 6, Тексп, °C = -55...+150, Тип монт. = smd,... Транзистори Корпус: SOICN-8 Очікується: 2500 Од.
Anzahl je Verpackung: 2500 Stücke
verfügbar 426 Stücke:
Im Einkaufswagen  Stück im Wert von  UAH
SI4143DY-T1-GE3 si4143dy.pdf
SI4143DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CHANNEL 30V 25.3A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 6630 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 6W (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 25.3A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 12630 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.64 EUR
16+1.1 EUR
100+0.72 EUR
500+0.56 EUR
1000+0.51 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
SI4143DY-T1-GE3 si4143dy.pdf
SI4143DY-T1-GE3
Hersteller: Vishay Semiconductors
MOSFETs -30V Vds 25V Vgs SO-8
auf Bestellung 108035 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.27 EUR
10+1.43 EUR
100+0.95 EUR
500+0.74 EUR
1000+0.68 EUR
2500+0.6 EUR
5000+0.56 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
SI4143DY-T1-GE3 si4143dy.pdf
Hersteller: Vishay Siliconix
P-канальний ПТ, Udss, В = 30, Id = 25,3 А, Ciss, пФ @ Uds, В = 6630 @ 15, Qg, нКл = 167 @ 10 В, Rds = 6,2 мОм @ 12 A, 10 В, Ugs(th) = 2,5 В @ 250 мкА, Р, Вт = 6, Тексп, °C = -55...+150, Тип монт. = smd,... Транзистори Корпус: SOICN-8 Очікується: 2500 Од.
Anzahl je Verpackung: 2500 Stücke
verfügbar 426 Stücke:
Im Einkaufswagen  Stück im Wert von  UAH