SI4156DY-T1-GE3

SI4156DY-T1-GE3

SI4156DY-T1-GE3

Hersteller: Vishay Semiconductors
MOSFET 30V Vds 20V Vgs SO-8
si4156dy-1764456.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 48946 Stücke
Lieferzeit 14-28 Tag (e)
20+ 2.6 EUR
23+ 2.32 EUR
100+ 1.81 EUR
500+ 1.5 EUR

Technische Details SI4156DY-T1-GE3

Description: MOSFET N-CH 30V 24A 8-SOIC, Package / Case: 8-SOIC (0.154", 3.90mm Width), Supplier Device Package: 8-SO, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 2.5W (Ta), 6W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Rds On (Max) @ Id, Vgs: 6mOhm @ 15.7A, 10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Drain to Source Voltage (Vdss): 30V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $).

Preis SI4156DY-T1-GE3 ab 1.5 EUR bis 2.6 EUR

SI4156DY-T1-GE3
Hersteller:

si4156dy.pdf si4156dy.pdf
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SI4156DY-T1-GE3
SI4156DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 24A 8SO
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SI4156
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 6mOhm @ 15.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
si4156dy.pdf
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
SI4156DY-T1-GE3
SI4156DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 24A 8SO
Base Part Number: SI4156
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 6mOhm @ 15.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
si4156dy.pdf
auf Bestellung 5756 Stücke
Lieferzeit 21-28 Tag (e)
SI4156DY-T1-GE3
SI4156DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 24A 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 6mOhm @ 15.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
si4156dy.pdf
auf Bestellung 3622 Stücke
Lieferzeit 21-28 Tag (e)