SI4156DY-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 24A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15.7A, 10V
Power Dissipation (Max): 2.5W (Ta), 6W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
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Technische Details SI4156DY-T1-GE3 Vishay Siliconix
Description: VISHAY - SI4156DY-T1-GE3 - Leistungs-MOSFET, n-Kanal, 30 V, 24 A, 0.0048 ohm, SOIC, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 30V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 24A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 2.2V, euEccn: NLR, Verlustleistung: 2.5W, Bauform - Transistor: SOIC, Anzahl der Pins: 8Pin(s), Produktpalette: -, productTraceability: No, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.0048ohm, SVHC: Lead (07-Nov-2024).
Weitere Produktangebote SI4156DY-T1-GE3 nach Preis ab 0.7 EUR bis 3.88 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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SI4156DY-T1-GE3 | Vishay Semiconductors |
MOSFETs 30V Vds 20V Vgs SO-8 |
auf Bestellung 56734 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4156DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 24A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 15.7A, 10V Power Dissipation (Max): 2.5W (Ta), 6W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V |
auf Bestellung 4627 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI4156DY-T1-GE3 | Vishay Siliconix |
MOSFET N-CH 30V 24A 8SO Транзистори |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI4156DY-T1-GE3 |
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auf Bestellung 25 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SI4156DY-T1-GE3 |
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Hersteller: Vishay Semiconductors
MOSFETs 30V Vds 20V Vgs SO-8
MOSFETs 30V Vds 20V Vgs SO-8
auf Bestellung 56734 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.2 EUR |
| 10+ | 1.5 EUR |
| 100+ | 1.05 EUR |
| 500+ | 0.9 EUR |
| 1000+ | 0.77 EUR |
| 2500+ | 0.7 EUR |
| SI4156DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 24A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15.7A, 10V
Power Dissipation (Max): 2.5W (Ta), 6W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
Description: MOSFET N-CH 30V 24A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15.7A, 10V
Power Dissipation (Max): 2.5W (Ta), 6W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
auf Bestellung 4627 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.28 EUR |
| 14+ | 1.54 EUR |
| 100+ | 1.13 EUR |
| 500+ | 0.95 EUR |
| 1000+ | 0.83 EUR |
| SI4156DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
MOSFET N-CH 30V 24A 8SO Транзистори
MOSFET N-CH 30V 24A 8SO Транзистори
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 3.88 EUR |
| SI4156DY-T1-GE3 |
|
auf Bestellung 25 Stücke:
Lieferzeit 21-28 Tag (e)