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SI4186DY-T1-GE3

SI4186DY-T1-GE3 Vishay Siliconix


si4186dy.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 35.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.8A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 15A, 10V
Power Dissipation (Max): 3W (Ta), 6W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3630 pF @ 10 V
auf Bestellung 2500 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+1.15 EUR
Mindestbestellmenge: 2500
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Technische Details SI4186DY-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 20V 35.8A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35.8A (Tc), Rds On (Max) @ Id, Vgs: 2.6mOhm @ 15A, 10V, Power Dissipation (Max): 3W (Ta), 6W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3630 pF @ 10 V.

Weitere Produktangebote SI4186DY-T1-GE3 nach Preis ab 1.22 EUR bis 3.28 EUR

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SI4186DY-T1-GE3 SI4186DY-T1-GE3 Hersteller : Vishay Siliconix si4186dy.pdf Description: MOSFET N-CH 20V 35.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.8A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 15A, 10V
Power Dissipation (Max): 3W (Ta), 6W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3630 pF @ 10 V
auf Bestellung 4214 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
10+2.78 EUR
12+ 2.27 EUR
100+ 1.76 EUR
500+ 1.5 EUR
1000+ 1.22 EUR
Mindestbestellmenge: 10
SI4186DY-T1-GE3 SI4186DY-T1-GE3 Hersteller : Vishay Semiconductors si4186dy-1764462.pdf MOSFET 20V Vds 20V Vgs SO-8
auf Bestellung 23831 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
16+3.28 EUR
18+ 2.94 EUR
100+ 2.3 EUR
500+ 1.9 EUR
Mindestbestellmenge: 16
SI4186DY-T1-GE3 si4186dy.pdf
auf Bestellung 798200 Stücke:
Lieferzeit 21-28 Tag (e)
SI4186DY-T1-GE3 Hersteller : VISHAY si4186dy.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 35.8A; Idm: 70A; 6W
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 6W
Polarisation: unipolar
Gate charge: 90nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 70A
Case: SO8
Drain-source voltage: 20V
Drain current: 35.8A
On-state resistance: 3.2mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SI4186DY-T1-GE3 Hersteller : VISHAY si4186dy.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 35.8A; Idm: 70A; 6W
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 6W
Polarisation: unipolar
Gate charge: 90nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 70A
Case: SO8
Drain-source voltage: 20V
Drain current: 35.8A
On-state resistance: 3.2mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar