SI4186DY-T1-GE3

SI4186DY-T1-GE3

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si4186dy.pdf
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Technische Details SI4186DY-T1-GE3

Description: MOSFET N-CH 20V 35.8A 8SO, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 35.8A (Tc), Base Part Number: SI4186, Package / Case: 8-SOIC (0.154", 3.90mm Width), Drain to Source Voltage (Vdss): 20V, Technology: MOSFET (Metal Oxide), Supplier Device Package: 8-SOIC, Mounting Type: Surface Mount, FET Type: N-Channel, Part Status: Active, Packaging: Tape & Reel (TR), Manufacturer: Vishay Siliconix, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 3W (Ta), 6W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 3630pF @ 10V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V, Vgs(th) (Max) @ Id: 2.4V @ 250µA, Rds On (Max) @ Id, Vgs: 2.6mOhm @ 15A, 10V.

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SI4186DY-T1-GE3
SI4186DY-T1-GE3
Hersteller: Vishay Semiconductors
MOSFET 20V Vds 20V Vgs SO-8
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SI4186DY-T1-GE3
SI4186DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 35.8A 8SO
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35.8A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SI4186
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3W (Ta), 6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3630pF @ 10V
Vgs (Max): ±20V
si4186dy.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4186DY-T1-GE3
SI4186DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 35.8A 8SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35.8A (Tc)
Base Part Number: SI4186
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3W (Ta), 6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3630pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 15A, 10V
si4186dy.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen