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Technische Details SI4186DY-T1-GE3 Vishay
Description: VISHAY - SI4186DY-T1-GE3 - Leistungs-MOSFET, n-Kanal, 20 V, 35.8 A, 0.0026 ohm, SOIC, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, euEccn: NLR, Drain-Source-Spannung Vds: 20V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 35.8A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, Gate-Source-Schwellenspannung, max.: 2.4V, Verlustleistung: 3W, SVHC: Lead (04-Feb-2026), Bauform - Transistor: SOIC, Anzahl der Pins: 8Pin(s), Produktpalette: TrenchFET Series, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 0.0026ohm.
Weitere Produktangebote SI4186DY-T1-GE3 nach Preis ab 0.8 EUR bis 4.12 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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SI4186DY-T1-GE3 | Vishay |
 Trans MOSFET N-CH 20V 35.8A 8-Pin SOIC N T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4186DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 20V 35.8A 8SO Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 3630 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 2.4V @ 250µA Power Dissipation (Max): 3W (Ta), 6W (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 35.8A (Tc) FET Type: N-Channel |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4186DY-T1-GE3 | Vishay |
Trans MOSFET N-CH 20V 35.8A 8-Pin SOIC N T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4186DY-T1-GE3 | Vishay Semiconductors |
MOSFETs 20V Vds 20V Vgs SO-8 |
auf Bestellung 33613 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4186DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 20V 35.8A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35.8A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 15A, 10V Power Dissipation (Max): 3W (Ta), 6W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3630 pF @ 10 V |
auf Bestellung 12485 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4186DY-T1-GE3 | VISHAY |
Description: VISHAY - SI4186DY-T1-GE3 - Leistungs-MOSFET, n-Kanal, 20 V, 35.8 A, 0.0026 ohm, SOIC, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 20V rohsCompliant: Y-EX Dauer-Drainstrom Id: 35.8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Source-Schwellenspannung, max.: 2.4V Verlustleistung: 3W SVHC: Lead (04-Feb-2026) Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.0026ohm |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI4186DY-T1-GE3 |
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auf Bestellung 798200 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SI4186DY-T1-GE3 |
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Hersteller: Vishay
Trans MOSFET N-CH 20V 35.8A 8-Pin SOIC N T/R
Trans MOSFET N-CH 20V 35.8A 8-Pin SOIC N T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.8 EUR |
| SI4186DY-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 35.8A 8SO
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3630 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 3W (Ta), 6W (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 35.8A (Tc)
FET Type: N-Channel
Description: MOSFET N-CH 20V 35.8A 8SO
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3630 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 3W (Ta), 6W (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 35.8A (Tc)
FET Type: N-Channel
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.94 EUR |
| 5000+ | 0.87 EUR |
| SI4186DY-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 20V 35.8A 8-Pin SOIC N T/R
Trans MOSFET N-CH 20V 35.8A 8-Pin SOIC N T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.21 EUR |
| SI4186DY-T1-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs 20V Vds 20V Vgs SO-8
MOSFETs 20V Vds 20V Vgs SO-8
auf Bestellung 33613 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.67 EUR |
| 10+ | 1.82 EUR |
| 100+ | 1.4 EUR |
| 500+ | 1.11 EUR |
| 1000+ | 1 EUR |
| 2500+ | 0.88 EUR |
| 5000+ | 0.86 EUR |
| SI4186DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 35.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.8A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 15A, 10V
Power Dissipation (Max): 3W (Ta), 6W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3630 pF @ 10 V
Description: MOSFET N-CH 20V 35.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.8A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 15A, 10V
Power Dissipation (Max): 3W (Ta), 6W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3630 pF @ 10 V
auf Bestellung 12485 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.68 EUR |
| 12+ | 1.88 EUR |
| 100+ | 1.44 EUR |
| 500+ | 1.14 EUR |
| 1000+ | 1.04 EUR |
| SI4186DY-T1-GE3 |
|
Hersteller: VISHAY
Description: VISHAY - SI4186DY-T1-GE3 - Leistungs-MOSFET, n-Kanal, 20 V, 35.8 A, 0.0026 ohm, SOIC, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 20V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 35.8A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 2.4V
Verlustleistung: 3W
SVHC: Lead (04-Feb-2026)
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.0026ohm
Description: VISHAY - SI4186DY-T1-GE3 - Leistungs-MOSFET, n-Kanal, 20 V, 35.8 A, 0.0026 ohm, SOIC, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 20V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 35.8A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 2.4V
Verlustleistung: 3W
SVHC: Lead (04-Feb-2026)
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.0026ohm
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 61+ | 4.12 EUR |
| 97+ | 2.42 EUR |
| 144+ | 1.5 EUR |
| 500+ | 1.18 EUR |
| 1000+ | 1.15 EUR |
| SI4186DY-T1-GE3 |
|
auf Bestellung 798200 Stücke:
Lieferzeit 21-28 Tag (e)