auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.67 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI4186DY-T1-GE3 Vishay
Description: MOSFET N-CH 20V 35.8A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35.8A (Tc), Rds On (Max) @ Id, Vgs: 2.6mOhm @ 15A, 10V, Power Dissipation (Max): 3W (Ta), 6W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3630 pF @ 10 V.
Weitere Produktangebote SI4186DY-T1-GE3 nach Preis ab 0.68 EUR bis 2.32 EUR
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SI4186DY-T1-GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 20V 35.8A 8-Pin SOIC N T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4186DY-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 20V 35.8A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35.8A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 15A, 10V Power Dissipation (Max): 3W (Ta), 6W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3630 pF @ 10 V |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4186DY-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 20V 35.8A 8-Pin SOIC N T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4186DY-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 20V 35.8A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35.8A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 15A, 10V Power Dissipation (Max): 3W (Ta), 6W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3630 pF @ 10 V |
auf Bestellung 12485 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4186DY-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFETs 20V Vds 20V Vgs SO-8 |
auf Bestellung 33873 Stücke: Lieferzeit 10-14 Tag (e) |
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auf Bestellung 798200 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4186DY-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 20V 35.8A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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SI4186DY-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 20V 35.8A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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| SI4186DY-T1-GE3 | Hersteller : VISHAY |
SI4186DY-T1-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |