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Technische Details SI4186DY-T1-GE3 Vishay
Description: MOSFET N-CH 20V 35.8A 8SO, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 3630 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 2.4V @ 250µA, Power Dissipation (Max): 3W (Ta), 6W (Tc), Rds On (Max) @ Id, Vgs: 2.6mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 35.8A (Tc), FET Type: N-Channel.
Weitere Produktangebote SI4186DY-T1-GE3 nach Preis ab 0.82 EUR bis 2.68 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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SI4186DY-T1-GE3 | Vishay |
 Trans MOSFET N-CH 20V 35.8A 8-Pin SOIC N T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4186DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 20V 35.8A 8SO Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 3630 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 2.4V @ 250µA Power Dissipation (Max): 3W (Ta), 6W (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 35.8A (Tc) FET Type: N-Channel |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4186DY-T1-GE3 | Vishay |
Trans MOSFET N-CH 20V 35.8A 8-Pin SOIC N T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4186DY-T1-GE3 | Vishay Semiconductors |
MOSFETs 20V Vds 20V Vgs SO-8 |
auf Bestellung 33613 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4186DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 20V 35.8A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35.8A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 15A, 10V Power Dissipation (Max): 3W (Ta), 6W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3630 pF @ 10 V |
auf Bestellung 12485 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI4186DY-T1-GE3 |
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auf Bestellung 798200 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SI4186DY-T1-GE3 |
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Hersteller: Vishay
Trans MOSFET N-CH 20V 35.8A 8-Pin SOIC N T/R
Trans MOSFET N-CH 20V 35.8A 8-Pin SOIC N T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.82 EUR |
| SI4186DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 35.8A 8SO
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3630 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 3W (Ta), 6W (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 35.8A (Tc)
FET Type: N-Channel
Description: MOSFET N-CH 20V 35.8A 8SO
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3630 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 3W (Ta), 6W (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 35.8A (Tc)
FET Type: N-Channel
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.94 EUR |
| 5000+ | 0.87 EUR |
| SI4186DY-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 20V 35.8A 8-Pin SOIC N T/R
Trans MOSFET N-CH 20V 35.8A 8-Pin SOIC N T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.25 EUR |
| SI4186DY-T1-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs 20V Vds 20V Vgs SO-8
MOSFETs 20V Vds 20V Vgs SO-8
auf Bestellung 33613 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.67 EUR |
| 10+ | 1.82 EUR |
| 100+ | 1.4 EUR |
| 500+ | 1.11 EUR |
| 1000+ | 1 EUR |
| 2500+ | 0.88 EUR |
| 5000+ | 0.86 EUR |
| SI4186DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 35.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.8A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 15A, 10V
Power Dissipation (Max): 3W (Ta), 6W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3630 pF @ 10 V
Description: MOSFET N-CH 20V 35.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.8A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 15A, 10V
Power Dissipation (Max): 3W (Ta), 6W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3630 pF @ 10 V
auf Bestellung 12485 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.68 EUR |
| 12+ | 1.88 EUR |
| 100+ | 1.44 EUR |
| 500+ | 1.14 EUR |
| 1000+ | 1.04 EUR |
| SI4186DY-T1-GE3 |
|
auf Bestellung 798200 Stücke:
Lieferzeit 21-28 Tag (e)