SI4288DY-T1-GE3

SI4288DY-T1-GE3

Hersteller: VISHAY
Material: SI4288DY-T1-GE3 Multi channel transistors
si4288dy.pdf si4288dy.pdf
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Technische Details SI4288DY-T1-GE3

Description: MOSFET 2N-CH 40V 9.2A 8SO, Manufacturer: Vishay Siliconix, Packaging: Tape & Reel (TR), Part Status: Active, FET Type: 2 N-Channel (Dual), FET Feature: Logic Level Gate, Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 9.2A, Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 20V, Power - Max: 3.1W, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Supplier Device Package: 8-SOIC, Base Part Number: SI4288.

Preis SI4288DY-T1-GE3 ab 0 EUR bis 0 EUR

SI4288DY-T1-GE3
Hersteller: VISHAY
Material: SI4288DY-T1-GE3 Multi channel transistors
si4288dy.pdf si4288dy.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4288DY-T1-GE3
SI4288DY-T1-GE3
Hersteller: Vishay Semiconductors
MOSFET 40V Vds 20V Vgs SO-8
VISH_S_A0002474658_1-2568210.pdf
auf Bestellung 1 Stücke
Lieferzeit 14-28 Tag (e)
SI4288DY-T1-GE3
SI4288DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 9.2A 8SO
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9.2A
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 20V
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Base Part Number: SI4288
si4288dy.pdf
auf Bestellung 27314 Stücke
Lieferzeit 21-28 Tag (e)
SI4288DY-T1-GE3
SI4288DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 9.2A 8SO
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9.2A
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 20V
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Base Part Number: SI4288
si4288dy.pdf
auf Bestellung 27314 Stücke
Lieferzeit 21-28 Tag (e)
SI4288DY-T1-GE3
SI4288DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 9.2A 8SO
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.2A
Drain to Source Voltage (Vdss): 40V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
si4288dy.pdf
auf Bestellung 12640 Stücke
Lieferzeit 21-28 Tag (e)