SI4288DY-T1-GE3
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Technische Details SI4288DY-T1-GE3
Description: MOSFET 2N-CH 40V 9.2A 8SO, Manufacturer: Vishay Siliconix, Packaging: Tape & Reel (TR), Part Status: Active, FET Type: 2 N-Channel (Dual), FET Feature: Logic Level Gate, Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 9.2A, Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 20V, Power - Max: 3.1W, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Supplier Device Package: 8-SOIC, Base Part Number: SI4288.
Preis SI4288DY-T1-GE3 ab 0 EUR bis 0 EUR
SI4288DY-T1-GE3 Hersteller: VISHAY Material: SI4288DY-T1-GE3 Multi channel transistors ![]() ![]() |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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SI4288DY-T1-GE3 Hersteller: Vishay Semiconductors MOSFET 40V Vds 20V Vgs SO-8 ![]() |
auf Bestellung 1 Stücke ![]() Lieferzeit 14-28 Tag (e) |
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SI4288DY-T1-GE3 Hersteller: Vishay Siliconix Description: MOSFET 2N-CH 40V 9.2A 8SO Manufacturer: Vishay Siliconix Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 9.2A Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 20V Power - Max: 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC Base Part Number: SI4288 ![]() |
auf Bestellung 27314 Stücke ![]() Lieferzeit 21-28 Tag (e) |
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SI4288DY-T1-GE3 Hersteller: Vishay Siliconix Description: MOSFET 2N-CH 40V 9.2A 8SO Manufacturer: Vishay Siliconix Packaging: Cut Tape (CT) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 9.2A Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 20V Power - Max: 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC Base Part Number: SI4288 ![]() |
auf Bestellung 27314 Stücke ![]() Lieferzeit 21-28 Tag (e) |
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SI4288DY-T1-GE3 Hersteller: Vishay Siliconix Description: MOSFET 2N-CH 40V 9.2A 8SO Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 3.1W Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 20V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 9.2A Drain to Source Voltage (Vdss): 40V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Dual) ![]() |
auf Bestellung 12640 Stücke ![]() Lieferzeit 21-28 Tag (e) |
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