SI4288DY-T1-GE3
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Technische Details SI4288DY-T1-GE3
Description: MOSFET 2N-CH 40V 9.2A 8SO, Manufacturer: Vishay Siliconix, Packaging: Tape & Reel (TR), Part Status: Active, FET Type: 2 N-Channel (Dual), FET Feature: Logic Level Gate, Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 9.2A, Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 20V, Power - Max: 3.1W, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Supplier Device Package: 8-SOIC, Base Part Number: SI4288.
Preis SI4288DY-T1-GE3 ab 0 EUR bis 0 EUR
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SI4288DY-T1-GE3 Hersteller: VISHAY Material: SI4288DY-T1-GE3 Multi channel transistors 
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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 Hersteller: Vishay Semiconductors MOSFET 40V Vds 20V Vgs SO-8
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auf Bestellung 1 Stücke  Lieferzeit 14-28 Tag (e) |
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 Hersteller: Vishay Siliconix Description: MOSFET 2N-CH 40V 9.2A 8SO Manufacturer: Vishay Siliconix Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 9.2A Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 20V Power - Max: 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC Base Part Number: SI4288
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auf Bestellung 27314 Stücke Lieferzeit 21-28 Tag (e) |
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Hersteller: Vishay Siliconix Description: MOSFET 2N-CH 40V 9.2A 8SO Manufacturer: Vishay Siliconix Packaging: Cut Tape (CT) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 9.2A Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 20V Power - Max: 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC Base Part Number: SI4288
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auf Bestellung 27314 Stücke Lieferzeit 21-28 Tag (e) |
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 Hersteller: Vishay Siliconix Description: MOSFET 2N-CH 40V 9.2A 8SO Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 3.1W Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 20V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 9.2A Drain to Source Voltage (Vdss): 40V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Dual)
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auf Bestellung 12640 Stücke Lieferzeit 21-28 Tag (e) |
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