SI4288DY-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 9.2A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9.2A
Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 20V
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2N-CH 40V 9.2A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9.2A
Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 20V
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.92 EUR |
5000+ | 0.87 EUR |
12500+ | 0.83 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI4288DY-T1-GE3 Vishay Siliconix
Description: VISHAY - SI4288DY-T1-GE3 - Dual-MOSFET, n-Kanal, 40 V, 40 V, 9.2 A, 9.2 A, 0.0165 ohm, tariffCode: 85412900, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 9.2A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, Drain-Source-Spannung Vds, p-Kanal: 40V, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 9.2A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.0165ohm, Verlustleistung, p-Kanal: 3.1W, Drain-Source-Spannung Vds, n-Kanal: 40V, euEccn: NLR, Bauform - Transistor: SOIC, Anzahl der Pins: 8Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 0.0165ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 3.1W, Betriebstemperatur, max.: 150°C, SVHC: Lead (10-Jun-2022).
Weitere Produktangebote SI4288DY-T1-GE3 nach Preis ab 1.01 EUR bis 3.72 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
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SI4288DY-T1-GE3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 7.4A; 3.1W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 7.4A Power dissipation: 3.1W Case: SO8 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Gate charge: 4.9nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4647 Stücke: Lieferzeit 7-14 Tag (e) |
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SI4288DY-T1-GE3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 7.4A; 3.1W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 7.4A Power dissipation: 3.1W Case: SO8 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Gate charge: 4.9nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 4647 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4288DY-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 40V 9.2A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 9.2A Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 20V Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 19546 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4288DY-T1-GE3 | Hersteller : Vishay Semiconductors | MOSFET 40V Vds 20V Vgs SO-8 |
auf Bestellung 47485 Stücke: Lieferzeit 14-28 Tag (e) |
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SI4288DY-T1-GE3 | Hersteller : VISHAY |
Description: VISHAY - SI4288DY-T1-GE3 - Dual-MOSFET, n-Kanal, 40 V, 40 V, 9.2 A, 9.2 A, 0.0165 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 9.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 40V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 9.2A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0165ohm Verlustleistung, p-Kanal: 3.1W Drain-Source-Spannung Vds, n-Kanal: 40V euEccn: NLR Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.0165ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 3.1W Betriebstemperatur, max.: 150°C SVHC: Lead (10-Jun-2022) |
auf Bestellung 25072 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4288DY-T1-GE3 | Hersteller : Vishay | Trans MOSFET N-CH 40V 7.4A 8-Pin SOIC N T/R |
auf Bestellung 7500 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4288DY-T1-GE3 | Hersteller : Vishay | Trans MOSFET N-CH 40V 7.4A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |