SI4403CDY-T1-GE3

SI4403CDY-T1-GE3

SI4403CDY-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 13.4A 8SO
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 5W (Tc)
Current - Continuous Drain (Id) @ 25°C: 13.4A (Tc)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 9A, 4.5V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active

si4403cd.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
2500+ 0.84 EUR

Technische Details SI4403CDY-T1-GE3

Description: MOSFET P-CH 20V 13.4A 8SOIC, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 5W (Tc), Package / Case: 8-SOIC (0.154", 3.90mm Width), Input Capacitance (Ciss) (Max) @ Vds: 2380pF @ 10V, Vgs (Max): ±8V, Supplier Device Package: 8-SO, Mounting Type: Surface Mount, Gate Charge (Qg) (Max) @ Vgs: 90nC @ 8V, Vgs(th) (Max) @ Id: 1V @ 250µA, Rds On (Max) @ Id, Vgs: 15.5mOhm @ 9A, 4.5V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Current - Continuous Drain (Id) @ 25°C: 13.4A (Tc), Drain to Source Voltage (Vdss): 20V.

Preis SI4403CDY-T1-GE3 ab 0.84 EUR bis 2.13 EUR

SI4403CDY-T1-GE3
SI4403CDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 13.4A 8SO
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 10 V
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 13.4A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 8-SOIC
si4403cd.pdf
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
13+ 2.08 EUR
15+ 1.85 EUR
100+ 1.42 EUR
500+ 1.12 EUR
1000+ 0.9 EUR
SI4403CDY-T1-GE3
SI4403CDY-T1-GE3
Hersteller: Vishay Semiconductors
MOSFET 1.8V P-Channel
si4403cd-1765025.pdf
auf Bestellung 16997 Stücke
Lieferzeit 14-28 Tag (e)
25+ 2.13 EUR
28+ 1.89 EUR
100+ 1.45 EUR
500+ 1.17 EUR
SI4403CDY-T1-GE3
SI4403CDY-T1-GE3
Hersteller: Vishay
Trans MOSFET P-CH 20V 13.4A 8-Pin SOIC N T/R
si4403cd.pdf
5000 Stücke
SI4403CDY-T1-GE3
Hersteller: Vishay
Trans MOSFET P-CH 20V 13.4A 8-Pin SOIC N T/R
si4403cd.pdf si4403cd.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4403CDY-T1-GE3
Hersteller: Vishay
Trans MOSFET P-CH 20V 13.4A 8-Pin SOIC N T/R
si4403cd.pdf si4403cd.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4403CDY-T1-GE3
SI4403CDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 13.4A 8SOIC
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Tc)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Input Capacitance (Ciss) (Max) @ Vds: 2380pF @ 10V
Vgs (Max): ±8V
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 9A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 13.4A (Tc)
Drain to Source Voltage (Vdss): 20V
si4403cd.pdf
auf Bestellung 3318 Stücke
Lieferzeit 21-28 Tag (e)